Low resistive silicon substrate as an etch-stop layer for drilling thick SiO 2 by spark assisted chemical engraving (SACE)

Microsystem Technologies

Volumn 17, Issue 3, 2011, Pages 373-380

  Ozhikandathil, Jayan ^a   Morrison, Andrew ^a   Packirisamy, Muthukumaran ^a   Wüthrich, Rolf ^a  

^a Gina Cody School of Engineering and Computer Science   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE SILICON; ELECTRICALLY CONDUCTIVE; ETCH RATES; ETCH STOP; ETCH-STOP LAYERS; MICRO-DRILLING; PULSED DC; SCANNING ELECTRON MICROSCOPE; SILICON PLATFORMS; SILICON SUBSTRATES; SPARK ASSISTED CHEMICAL ENGRAVING;

CONDUCTIVE MATERIALS; ELECTRIC SPARKS; ETCHING; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS;

SILICON OXIDES;

EID: 84856298845     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-011-1248-4     Document Type: Article

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