Integrated tunable quantum-dot laser for optical coherence tomography in the 1.7 μm wavelength region

IEEE Journal of Quantum Electronics

Volumn 48, Issue 2, 2012, Pages 87-98

  Tilma, Bauke W ^a,b   Jiao, Yuqing ^a,c   Kotani, Junji ^a,d   Smalbrugge, Barry ^a   Ambrosius, Huub P M M ^a   Thijs, Peter J ^e   Leijtens, Xaveer J M ^a   Nötzel, Richard ^a   Smit, Meint K ^a   Bente, Erwin A J M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b ETH ZURICH   (Switzerland)

^c ZHEJIANG UNIVERSITY   (China)

^d FUJITSU LABORATORIES LTD   (Japan)

^e PHILIPS RESEARCH LABORATORIES   (Germany)

Author keywords

Integrated optoelectronics; laser tuning; optical imaging; quantum dot lasers

Indexed keywords

1550 NM; ACTIVE-PASSIVE INTEGRATION; ELECTRO-OPTICAL; FREE SPACE; MONOLITHIC PHOTONIC INTEGRATED CIRCUITS; MONOLITHICALLY INTEGRATED; MW OUTPUT; OPTICAL IMAGING; PASSIVE COMPONENTS; PHASE MODULATOR; TELECOM WAVELENGTHS; TUNING CAPABILITY; TUNING RANGES; TWO WAVELENGTH; WAVELENGTH REGIONS;

ARRAYED WAVEGUIDE GRATINGS; INTEGRATED OPTOELECTRONICS; INTEGRATION; LASER TUNING; LASERS; MICHELSON INTERFEROMETERS; MONOLITHIC INTEGRATED CIRCUITS; OPTICAL TOMOGRAPHY; OPTICAL WAVEGUIDES; PHASE MODULATION; PHOTONIC INTEGRATION TECHNOLOGY; QUANTUM THEORY; SEMICONDUCTOR QUANTUM DOTS; WAVEGUIDES;

QUANTUM DOT LASERS;

EID: 84856257201     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2011.2165317     Document Type: Article

References (29)

1. A. F. Fercher, W. Drexler, C. K. Hitzenberger, and T. Lasser, "Optical coherence tomography-principles and applications," Rep. Prog. Phys., vol. 66, no. 2, pp. 239-303, Jan. 2003.
2. T. Zimmermann, J. Rietdorf, and R. Pepperkok, "Spectral imaging and its applications in live cell microscopy," FEBS Lett., vol. 546, no. 1, pp. 87-92, Jul. 2003. (Pubitemid 36782286)
3. P. Werle, "A review of recent advances in semiconductor laser based gas monitors," Spectrochim. Acta. Part A, vol. 54, no. 2, pp. 197-236, Feb. 1998. (Pubitemid 128408411)
4. A. D. Kersey, M. A. Davis, H. J. Patrick, M. LeBlanc, K. P. Koo, C. G. Askins, M. A. Putnam, and E. J. Friebele, "Fiber grating sensors," IEEE J. Lightw. Technol., vol. 15, no. 8, pp. 1442-1463, Aug. 1997.
5. L. A. Coldren, "Monolithic tunable diode lasers," IEEE J. Sel. Topics Quantum Electron., vol. 6, no. 6, pp. 988-999, Nov. 2000. (Pubitemid 32255314)
6. A. J. Ward, D. J. Robbins, G. Busico, E. Barton, L. Ponnampalam, J. P. Duck, N. D. Whitbread, P. J. Williams, D. C. J. Reid, A. C. Carter, and M. J. Wale, "Widely tunable DS-DBR laser width monolithically integrated SOA: Design and performance," IEEE J. Sel. Topics Quantum Electron., vol. 11, no. 1, pp. 149-156, Jan. 2005. (Pubitemid 40303985)
7. H. G. Bukkems, R. C. Strijbos, J. J. M. Binsma, H. de Vrieze, M. C. Larson, M. K. Smit, E. A. J. M. Bente, and B. H. Verbeek, "A tunable-MMI-coupler-based wavelength adjustable laser," IEEE J. Quantum Electron., vol. 43, no. 7, pp. 614-621, Jul. 2007.
8. A. Q. Liu and X. M. Zhang, "A review of MEMS external-cavity tunable lasers," J. Micromech. Microeng., vol. 17, no. 1, pp. R1-R13, Dec. 2006.
9. V. M. Kodach, J. Kalkman, D. J. Faber, and T. G. van Leeuwen, "Quantitative comparison of the OCT imaging depth at 1300 nm and 1600 nm," Biomed. Opt. Exp., vol. 1, no. 1, pp. 176-185, Jul. 2010.
10. L. Xu, "Monolithic integrated reflective transceiver in indium phosphide," Ph.D. thesis, Dept. Electr. Eng., Tech. Univ. Eindhoven, Eindhoven, The Netherlands, 2009.
11. J. H. D. Besten, "Integration of multiwavelength lasers with fast electro-optical modulators," Ph.D. thesis, Dept. Electr. Eng., Tech. Univ. Eindhoven, Eindhoven, The Netherlands, 2004.
12. L. Zhang, J. Sinsky, D. van Thourhout, N. Sauer, L. Stulz, A. Adamiecki, and S. Chandrasekhar, "Low-voltage high-speed travelling wave InGaAsP-InP phase modulator," IEEE J. Photon. Technol. Lett., vol. 17, no. 8, pp. 1831-1833, Aug. 2004.
13. M. K. Smit, R. Baets, and M. Wale, "InP-based photonic integration: Learning from CMOS," in Proc. 35th Eur. Conf. Opt. Commun., Vienna, Austria, Sep. 2009, pp. 1-2.
14. E. A. J. M. Bente and M. K. Smit, "Ultrafast InP optical integrated circuits," Proc. SPIE: Optoelectron. Integr. Circuits VIII, vol. 6124, pp. 383-392, Mar. 2006.
15. R. Nötzel, S. Anantathanasarn, R. P. J. van Veldhoven, F. W. M. van Otten, T. J. Eijkemans, A. Trampert, B. Satpati, Y. Barbarin, E. A. J. M. Bente, Y. S. Oei, T. de Vries, E.-J. Geluk, B. Smalbrugge, M. K. Smit, and J. H. Wolter, "Self assembled InAs/InP quantum dots for telecom applications in the 1.55 μm wavelength range: Wavelength tuning, stacking, polarization control, and lasing," Jpn. J. Appl. Phys., vol. 45, no. 8B, pp. 6544-6549, Aug. 2006. (Pubitemid 44274034)
16. B. W. Tilma, M. S. Tahvili, J. Kotani, R. Nötzel, M. K. Smit, and E. A. J. M. Bente, "Measurement and analysis of optical gain spectra in 1.6 to 1.8 μm InAs/InP (100) quantum-dot amplifiers," Opt. Quantum Electron., vol. 41, no. 10, pp. 735-749, May 2010.
17. B. W. Tilma, Y. Jiao, P. J. van Veldhoven, B. Smalbrugge, H. P. M. M. Ambrosius, P. J. Thijs, X. J. M. Leijtens, R. Nötzel, M. K. Smit, and E. A. J. M. Bente, "InP-based monolithically integrated tunable wavelength filters in the 1.6 μm to 1.8 μm wavelength region for tunable laser purposes," J. Lightw. Technol., vol. 29, no. 99, p. 1, Jul. 2011.
18. B. W. Tilma, E. A. J. M. Bente, X. J. M. Leijtens, R. N. Nötzel, and M. K. Smit, "Design of an integrated electro-optically tunable filter for tunable laser purposes," in Proc. 14th Eur. Conf. Int. Opt., Eindhoven, The Netherlands, Jun. 2008, pp. 181-184.
19. L. Xu, X. J. M. Leijtens, P. Urban, E. Smalbrugge, T. de Vries, Y. Oei, R. Nötzel, H. de Waardt, and M. K. Smit, "Novel reflective SOA with MMI-loop mirror based on semiinsulating InP," in Proc. 20th IEEE/LEOS Symp. Benelux Chapter, Enschede, The Netherlands, Nov. 2008, pp. 43-46.
20. J. J. M. Binsma, M. van Geemert, F. Heinrichsdorff, T. van Dongen, R. G. Broeke, and M. K. Smit, "MOVPE waveguide regrowth in InGaAsP/InP with extremely low butt joint loss," in Proc. IEEE/LEOS Symp. Benelux Chapter, Brussels, Belgium, Dec. 2001, pp. 245-248.
21. S. Anantathanasarn, R. Nötzel, P. J. V. Veldhoven, F. W. M. V. Otten, Y. Barbarin, G. Servanton, T. de Vries, B. Smalbrugge, E. J. Geluk, T. J. Eijkemans, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, and J. H. Wolter, "Lasing of wavelength-tunable (1.55 μm region) InAs/InGaAsP/InP (100) quantum dots grown by metal organic vapor-phase epitaxy," Appl. Phys. Lett., vol. 89, no. 7, pp. 073115-1-073115-3, Aug. 2006.
22. TU/e Data Acquisition & Control System-AWG100 [TUeDACS] [Online]. Available: http://www.tuedacs.nl/
23. M. Sorel, G. Giuliani, A. Scirè, R. Miglierina, S. Donati, and P. J. R. Laybourn, "Operating regimes of GaAs-AlGaAs semiconductor ring lasers: Experiment and model," IEEE J. Quantum Electron., vol. 39, no. 10, pp. 1187-1195, Oct. 2003.
24. V. Liepins, "High-resolution spectral analysis by using basis function adaptation approach," Ph.D. thesis, Inst. Electron. Comput. Sci., Univ. Latvia, Latvia, Europe, 1997.
25. N. A. Nassif, B. Cense, B. H. Park, M. C. Pierce, S. H. Yun, B. E. Bouma, G. J. Tearney, T. C. Chen, and J. F. de Boer, "In vivo highresolution video-rate spectral-domain optical coherence tomography of the human retina and optic nerve," Opt. Exp., vol. 12, no. 3, pp. 367-376, Feb. 2004.
26. J. Kotani, P. J. V. Veldhoven, T. de Vries, B. Smalbrugge, E. A. J. M. Bente, M. K. Smit, and R. Nötzel, "First demonstration of single-layer InAs/InP (100) quantum-dot laser: Continuous wave, room temperature, ground state," IEEE J. Electron. Lett., vol. 45, no. 25, pp. 1317-1318, Dec. 2009.
27. A. Kovsh, I. Krestnikov, D. Livshits, S. Mikhrin, J. Weimert, and A. Zhukov, "Quantum dot laser with 75 nm broad spectrum of emission," Opt. Lett., vol. 32, no. 7, pp. 793-795, Apr. 2007. (Pubitemid 46397416)
28. B. S. Ooi, H. S. Djie, W. Yang, T. Chee-Loon, J. C. M. Hwang, F. Xiao-Ming, J. M. Fastenau, A. W. K. Liu, G. T. Dang, and W. H. Chang, "Quantum dashes on InP substrate for broadband emitter applications," IEEE J. Sel. Topics Quantum Electron., vol. 14, no. 4, pp. 1230-1238, Jul. 2008.
29. C. F. Lin, B. L. Lee, and P. C. Lin, "Broad-band superluminescent diodes fabricated on a substrate with asymmetric dual quatum wells," IEEE Photon. Technol. Lett., vol. 8, no. 7, pp. 1456-1458, Jul. 1996.