Operating regimes of GaAs-AlGaAs semiconductor ring lasers: Experiment and model

IEEE Journal of Quantum Electronics

Volumn 39, Issue 10, 2003, Pages 1187-1195

  Sorel, M ^a   Giuliani, G ^b   Scire A ^c   Miglierina, R ^b   Donati, S ^b   Laybourn, P J R ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b UNIVERSITY OF PAVIA   (Italy)

^c CSIC   (Spain)

Author keywords

Laser stability; Optical bistability; Optical scattering; Ring lasers; Scattering parameters measurement; Semiconductor lasers

Indexed keywords

CHARGE CARRIERS; LIGHT SCATTERING; MATHEMATICAL MODELS; OPTICAL BISTABILITY; SCATTERING PARAMETERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS;

LASER STABILITY; SCATTERING PARAMETERS MEASUREMENT; SEMICONDUCTOR RING LASERS;

RING LASERS;

EID: 0141883968     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2003.817585     Document Type: Article

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