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Volumn 33, Issue 2, 2012, Pages 131-133

Electromechanical diode cell for cross-point nonvolatile memory arrays

Author keywords

Cross bar memory; cross point memory; electro mechanical device; nonvolatile memory

Indexed keywords

CROSS-BAR MEMORIES; CROSS-POINT MEMORY; MEMORY ARRAY; NON-VOLATILE MEMORIES; NONVOLATILE MEMORY CELLS; PROTOTYPE CELLS; RETENTION CHARACTERISTICS;

EID: 84856254506     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2174191     Document Type: Article
Times cited : (13)

References (10)
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  • 5
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    • Compact nanoelectro-mechanical non-volatile memory (NEMory) for 3D integration
    • W. Y. Choi, H. Kam, D. Lee, J. Lai, and T.-J. K. Liu, "Compact nanoelectro-mechanical non-volatile memory (NEMory) for 3D integration," in IEDM Tech. Dig., 2007, pp. 603-606.
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    • Choi, W.Y.1    Kam, H.2    Lee, D.3    Lai, J.4    Liu, T.-J.K.5
  • 6
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    • Coventor, Inc. and Sentaurus Ver. A-2008.09 (Synopsys, Inc.)
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    • D. Lee, H. Tran, B. Ho, and T.-J. K. Liu, "Electrical characterization of etch rate for micro-and nano-scale gap formation," J. Microelectromech. Syst., vol. 19, no. 5, pp. 1260-1263, Oct. 2010.
    • (2010) J. Microelectromech. Syst. , vol.19 , Issue.5 , pp. 1260-1263
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  • 10
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    • Adhesion effects on contact opening dynamics in micromachined switches
    • May
    • B. D. Jensen, K. Huang, L. L.-W. Chow, and K. Kurabayashi, "Adhesion effects on contact opening dynamics in micromachined switches," J. Appl. Phys., vol. 97, no. 10, pp. 103 535-1-103 535-9, May 2005.
    • (2005) J. Appl. Phys. , vol.97 , Issue.10 , pp. 1035351-1035359
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.