Structural properties of InAs-based nanostructures grown on GaAs(001) and GaAs(111)A by area selective epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 2, 2012, Pages 218-221

  Zander, Marlene ^a   Nishinaga, Jiro ^a   Iga, Kazuki ^a   Horikoshi, Yoshiji ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

Migration enhanced epitaxy; Molecular beam epitaxy; Nanostructures; Semiconducting In compounds

Indexed keywords

AREA SELECTIVE; DOT STRUCTURE; GAAS; GAAS(001); INAS; INAS/GAAS; MIGRATION ENHANCED EPITAXY; REACTION LAYERS; SEMICONDUCTING IN COMPOUNDS; STRAIN RELAXATION MECHANISM; SUBSTRATE TEMPERATURE;

EPITAXIAL GROWTH; GALLIUM ARSENIDE; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; SILICON COMPOUNDS; STRAIN RELAXATION; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING GALLIUM;

EID: 84856144791     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201100274     Document Type: Article

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