Area selective epitaxy of InAs on GaAs(0 0 1) and GaAs(1 1 1)A by migration enhanced epitaxy

Journal of Crystal Growth

Volumn 323, Issue 1, 2011, Pages 9-12

  Zander, M ^a   Nishinaga, J ^a   Iga, K ^a   Horikoshi, Y ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

Migration enhanced epitaxy; Molecular beam epitaxy; Nanostructures; Semiconducting indium compounds

Indexed keywords

ANNEALING TIME; AREA SELECTIVE; ETCHING PROCESS; GAAS; GROWTH METHOD; GROWTH MODE CHANGE; GROWTH PROCESS; INAS; INAS ISLAND; INAS/GAAS; MIGRATION ENHANCED EPITAXY; SEMI-INSULATING GAAS; SIMULTANEOUS DEPOSITION; SUBSTRATE TEMPERATURE; WINDOW AREA;

ATOMIC FORCE MICROSCOPY; DANGLING BONDS; EPITAXIAL GROWTH; ETCHING; GALLIUM ARSENIDE; INDIUM; INDIUM ARSENIDE; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM COMPOUNDS; SILICON COMPOUNDS; SUBSTRATES;

GALLIUM ALLOYS;

EID: 79957985362     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.12.033     Document Type: Article

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