Area selective epitaxy of anti-dot structure of GaAs by solid source MBE

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 1078-1083

  Hasegawa, Hiroyuki ^a   Kuriyama, Hiroaki ^a   Ito, Masahiro ^a   Horikoshi, Yoshiji ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

A1. Growth models; A3. Migration enhanced epitaxy; A3. Molecular beam epitaxy; A3. Selective epitaxy; B2. Semiconducting gallium arsenide

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SILICA; SUBSTRATES; THERMAL EFFECTS;

ANTI DOT STRUCTURE; AREA SELECTIVE EPITAXY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035398179     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00992-7     Document Type: Conference Paper

References (17)