Advantages of using amorphous indium zinc oxide films for window layer in Cu(In,Ga)Se 2 solar cells

Thin Solid Films

Volumn 520, Issue 6, 2012, Pages 2119-2122

  Warasawa, Moe ^a   Kaijo, Akira ^b   Sugiyama, Mutsumi ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b IDEMITSU KOSAN CO LTD   (Japan)

Author keywords

Copper indicum gallium selenide; Indium zinc oxide; Solar cells; Sputtering; Transparent conducting oxide; Window layer

Indexed keywords

CIGS SOLAR CELLS; CU(IN , GA)SE; GA-DOPED; GALLIUM SELENIDES; INDIUM ZINC OXIDE; INDIUM-ZINC-OXIDE FILMS; TRANSPARENT CONDUCTING OXIDE; WINDOW LAYER; ZNO;

AMORPHOUS FILMS; CONDUCTIVE FILMS; COPPER; ELECTRIC PROPERTIES; GALLIUM; GRAIN BOUNDARIES; INDIUM; SOLAR CELLS; SPUTTERING; ZINC; ZINC OXIDE;

OXIDE FILMS;

EID: 84855957417     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.08.093     Document Type: Article

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