Comparison of amorphous InZnO and polycrystalline ZnO:Al conductive layers for CIGS solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2009, Pages 001576-001581

  Sundaramoorthy, R ^a   Repins, I L ^a   Gennett, T ^a   Pern, F J ^a   Albin, D ^a   Li, Jian V ^a   DeHart, C ^a   Glynn, S ^a   Perkins, J D ^a   Ginley, D S ^a   Gessert, T ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CELL EFFICIENCY; CIGS SOLAR CELLS; CONDUCTIVE LAYER; CUINGASE; DEPOSITION CONDITIONS; DEVICE PERFORMANCE; DIFFERENT THICKNESS; DOPED ZNO; OPTICAL AND ELECTRICAL PROPERTIES; OXYGEN CONCENTRATIONS; POLYCRYSTALLINE ZNO; WINDOW LAYER;

AMORPHOUS MATERIALS; ELECTRIC RESISTANCE; OPTICAL PROPERTIES; OXYGEN; SHEET RESISTANCE; SOLAR CELLS; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 77951585911     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2009.5411376     Document Type: Conference Paper

References (11)

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