The effect of argon pressure, residual oxygen and exposure to air on the electrical and microstructural properties of sputtered chromium thin films

Thin Solid Films

Volumn 520, Issue 6, 2012, Pages 1762-1767

  Foroughi Abari, Ali ^a   Xu, Can ^a   Cadien, Kenneth C ^a  

^a UNIVERSITY OF ALBERTA   (Canada)

Author keywords

Chromium; Oxygen; Resistivity; Sputtering; Thin films

Indexed keywords

ARGON PRESSURE; ARGON SPUTTERING; BASE PRESSURE; CHROMIUM THIN FILMS; CR FILM; ELECTRICAL RESISTIVITY; ELECTRICAL TRANSPORT MEASUREMENTS; HIGH PRESSURE; MICROSTRUCTURAL PROPERTIES; POROUS STRUCTURES; RESIDUAL OXYGEN; RESISTIVITY VALUES; SPUTTERING CONDITIONS; SPUTTERING PRESSURES; SPUTTERING SYSTEMS; THIN FILMS-SPUTTERED;

CHROMIUM; ELECTRIC CONDUCTIVITY; MICROSTRUCTURE; OXYGEN; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SPUTTERING; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

VAPOR DEPOSITION;

EID: 84855912689     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.08.063     Document Type: Article

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