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Volumn 80, Issue 13, 2009, Pages

Resonant impurity scattering and electron-phonon scattering in the electrical resistivity of Cr thin films

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EID: 70749151868     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.134426     Document Type: Article
Times cited : (31)

References (38)
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    • A scan of the 45°off-axis (001) peak in a single crystal (011) oriented film should yield two peaks. In the literature it is suggested that two types of orientation relationships occur in Cr growth on Al2 O3 (0001): ORI with three orientations in plane (yielding six peaks) and ORII with six orientations in plane (yielding twelve peaks), 5.26°offset from ORI in either direction, for a total of nine orientation relationships and eighteen peaks in the azimuthal scan. However, the broad peaks observed in our diffraction pattern as well as in the literature cannot distinguish between ORI and ORII 5.26°apart so only six peaks are observed.
    • A scan of the 45°off-axis (001) peak in a single crystal (011) oriented film should yield two peaks. In the literature it is suggested that two types of orientation relationships occur in Cr growth on Al2 O3 (0001): ORI with three orientations in plane (yielding six peaks) and ORII with six orientations in plane (yielding twelve peaks), 5.26°offset from ORI in either direction, for a total of nine orientation relationships and eighteen peaks in the azimuthal scan. However, the broad peaks observed in our diffraction pattern as well as in the literature cannot distinguish between ORI and ORII 5.26°apart so only six peaks are observed.
  • 25
    • 70749148776 scopus 로고    scopus 로고
    • An additional film was grown on a Si thermal oxide substrate so at.% N could be measured without observing a signal from the SiNx substrate. For at.% C, the EDS chamber had a background 5 at.% C signal which obscured the measurement; the margin of error for the at.% C measurement is therefore 1%.
    • An additional film was grown on a Si thermal oxide substrate so at.% N could be measured without observing a signal from the SiNx substrate. For at.% C, the EDS chamber had a background 5 at.% C signal which obscured the measurement; the margin of error for the at.% C measurement is therefore 1%.
  • 27
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    • A T2 term in the resistivity due to electron-electron scattering has never been quantified for Cr, however an estimate based on the isoelectronic element W finds the magnitude of the electron-electron scattering resistivity significantly less than the residual in the Bloch-Gruneisen fit at low temperatures (0.0006μΩcm at 15 K) and dwarfed by the electron-phonon scattering term at moderate to high temperatures (1% of the electron-phonon resistivity at 150 K).
    • A T2 term in the resistivity due to electron-electron scattering has never been quantified for Cr, however an estimate based on the isoelectronic element W finds the magnitude of the electron-electron scattering resistivity significantly less than the residual in the Bloch-Gruneisen fit at low temperatures (0.0006μΩcm at 15 K) and dwarfed by the electron-phonon scattering term at moderate to high temperatures (1% of the electron-phonon resistivity at 150 K).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.