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A scan of the 45°off-axis (001) peak in a single crystal (011) oriented film should yield two peaks. In the literature it is suggested that two types of orientation relationships occur in Cr growth on Al2 O3 (0001): ORI with three orientations in plane (yielding six peaks) and ORII with six orientations in plane (yielding twelve peaks), 5.26°offset from ORI in either direction, for a total of nine orientation relationships and eighteen peaks in the azimuthal scan. However, the broad peaks observed in our diffraction pattern as well as in the literature cannot distinguish between ORI and ORII 5.26°apart so only six peaks are observed.
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A scan of the 45°off-axis (001) peak in a single crystal (011) oriented film should yield two peaks. In the literature it is suggested that two types of orientation relationships occur in Cr growth on Al2 O3 (0001): ORI with three orientations in plane (yielding six peaks) and ORII with six orientations in plane (yielding twelve peaks), 5.26°offset from ORI in either direction, for a total of nine orientation relationships and eighteen peaks in the azimuthal scan. However, the broad peaks observed in our diffraction pattern as well as in the literature cannot distinguish between ORI and ORII 5.26°apart so only six peaks are observed.
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An additional film was grown on a Si thermal oxide substrate so at.% N could be measured without observing a signal from the SiNx substrate. For at.% C, the EDS chamber had a background 5 at.% C signal which obscured the measurement; the margin of error for the at.% C measurement is therefore 1%.
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A T2 term in the resistivity due to electron-electron scattering has never been quantified for Cr, however an estimate based on the isoelectronic element W finds the magnitude of the electron-electron scattering resistivity significantly less than the residual in the Bloch-Gruneisen fit at low temperatures (0.0006μΩcm at 15 K) and dwarfed by the electron-phonon scattering term at moderate to high temperatures (1% of the electron-phonon resistivity at 150 K).
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