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Volumn 152, Issue 4, 2012, Pages 324-327
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Optical, electrical and structural characterization of ZnO:Al thin films prepared by a low cost solgel method
a
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Author keywords
A. ZnO:Al; B. Solgel; C. Optical properties; D. Electrical properties
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Indexed keywords
ANNEALING TEMPERATURES;
DOPING CONCENTRATION;
ELECTRICAL PROPERTY;
ELECTRICAL RESISTIVITY;
HEXAGONAL STRUCTURES;
LOW COSTS;
METAL-OXIDE- SEMICONDUCTORCAPACITORS;
OPTICAL BAND GAP ENERGY;
POLYCRYSTALLINE PHASE;
PURE ZNO;
SILICON (100);
SILICON SUBSTRATES;
SOL-GEL METHODS;
SOL-GEL SPIN COATING METHOD;
STRUCTURAL CHARACTERIZATION;
ZNO;
ZNO FILMS;
ZNO:AL THIN FILMS;
ALUMINUM;
ANNEALING;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC CONDUCTIVITY;
METALLIC COMPOUNDS;
METALLIC FILMS;
MOS CAPACITORS;
OPTICAL PROPERTIES;
OXIDE FILMS;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DOPING;
SPIN GLASS;
THIN FILMS;
X RAY DIFFRACTION;
ZINC OXIDE;
FILM PREPARATION;
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EID: 84855902633
PISSN: 00381098
EISSN: None
Source Type: Journal
DOI: 10.1016/j.ssc.2011.10.040 Document Type: Article |
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Times cited : (23)
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References (16)
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