Hydrogen passivation on the grain boundary and intragranular defects in various polysilicon thin-film transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 915-918

  Choi, Kwon Young ^a   Yoo, Juhn Suk ^a   Han, Min Koo ^a   Kim, Yong Sang ^b  

^a Seoul National University   (South Korea)

^b Myong Ji University   (South Korea)

Author keywords

Hydrogenation; Polycrystalline silicon; Postannealing; Thin film transistor; Trap state density

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ELECTRONIC DENSITY OF STATES; GATES (TRANSISTOR); GRAIN BOUNDARIES; HYDROGENATION; LEAKAGE CURRENTS; OXIDES; PASSIVATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

FIELD EFFECT MOBILITY; POLYCRYSTALLINE SILICON; POSTANNEALING; TAIL STATES; THICK GATE OXIDE; THRESHOLD VOLTAGE; TRAP STATE DENSITY;

THIN FILM TRANSISTORS;

EID: 0030086272     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.915     Document Type: Article

References (12)

1. J. G. Show and M. Hack: Int. Electrons. Device Meet. Tech. Dig. (IEEE, Philadelphia, 1992) p. 915.
2. I.-W. Wu, A. G. Lewis, T. Y. Huang and A. Chiang: IEEE Electron Device Lett. 10 (1989) 123.
3. I.-W. Wu, T.-Y. Huang, W. B. Jackson, A. G. Lewis and A. Chiang: IEEE Electron Dev. Lett. 12 (1991) 181.
4. I.-W. Wu, A. G. Lewis, T. Y. Huang, W. B. Jackson and A. Chiang: Int. Electrons. Device Meet. Tech. Dig. (IEEE, Philadelphia, 1990) p. 867.
5. T. Aoyama, Y. Mochizuki, G. Kawachi, S. Oikawa and K. Miyata: Jpn. J. Appl. Phys. 30 (1990) L84.
6. N. Kodama, H. Tanabe, K. Sera, K. Hamada, S. Saitoh, F. Okumura and K. Ikeda: Ext. Abstr. Solid State Devices and Materials (Business Center for Academic Societies, Japan, Tokyo, 1993) p. 431.
7. R. Carluccio, J. Stoemenos, G. Fortunato, D. B. Meakin and M. Bianconi: Appl. Phys. Lett. 66 (1995) 1394.
8. W. B. Jackson, N. M. Johnson, C. C. Tsai, I.-W. Wu, A. Chiang and D. Smith: Appl. Phys. Lett. 61 (1992) 1670.
9. Y. S. Kim, K. Y. Choi, S. K. Lee, B. H. Min and M. K. Han: Jpn. J. Appl. Phys. 33 (1994) 649.
10. J. Levinson, F. R. Shepherd, P. J. Scanlom, W. D. Westwood, G. Este and M. Rider: J. Appl. Phys. 53 (1982) 1993.
11. K. Ono, T. Aoyama, N. Konishi and K. Miyata: IEEE Trans. Electron Devices 39 (1992) 792.
12. J. R. Hwang, J. S. Park, M. C. Jun, J. Jang and M. K. Han: Mater. Res. Soc. Symp. Proc. 297 (1993) 913.