Analysis of p+-AlGaAs/n+-InGaP tunnel junction for high solar concentration cascade solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 1154-1156

  Bedair, S M ^a   Roberts, J C ^a   Jung, D ^a   Moody, B F ^a   El Masry, N A ^a   Katsuyama, T ^b  

^a North Carolina State University   (United States)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; CARBON; DIODES; ENERGY GAP; GALLIUM; HETEROJUNCTIONS; SEMICONDUCTING SELENIUM COMPOUNDS; TUNNEL JUNCTIONS;

DOPING LEVELS; FORWARD CURRENTS; LOW BAND GAP; PEAK CURRENTS; SOLAR CELL STRUCTURES; SOLAR CONCENTRATION;

SOLAR CELLS;

EID: 84949549846     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.916092     Document Type: Conference Paper

References (4)

1. M. A. Rao, E. J. Caine, H. Kroemer, S. I. Long and K. E. Babic, J. Appl. Phys., 61, 643 (1987).
2. R. E. Hayes, P. Gibart, J. Chevrier, and S. Wagner, Solar Cells 15, 231(1985).
3. nd Edition, New York: Wiley (1981), Chap. 9.
4. G. A. DeJong, M. S. Thesis, North Carolina State University, Raleigh, NC (1978).