Characterization of GaInP/Ge heterostructure solar cells by capacitance measurements at forward bias under illumination

Energy Procedia

Volumn 3, Issue , 2011, Pages 76-83

  Gudovskikh, A S ^a   Zelentsov, K S ^a   Kalyuzhnyy, N A ^b   Lantratov, V M ^b   Mintairov, S A ^b   Kleider, J P ^c,d,e,f  

^a ST PETERSBURG ACADEMIC UNIVERSITY   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c UNIV PARIS SUD   (France)

^d SUPELEC   (France)

^e UNIVERSITÉ PARIS SACLAY   (France)

^f SORBONNE UNIVERSITÉ   (France)

Author keywords

Capacitance measurements; Ge solar cells; Lifetime measurements; Surface recombination velocity

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER LIFETIME; DIFFUSION; GERMANIUM; OPEN CIRCUIT VOLTAGE; SOLAR CELLS;

DARK CURRENT-VOLTAGE; DIFFUSION CAPACITANCE; FREQUENCY DEPENDENCE; LIFETIME MEASUREMENTS; MINORITY CARRIER LIFETIMES; RECOMBINATION VELOCITY; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES;

CAPACITANCE;

EID: 79952775177     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.01.013     Document Type: Conference Paper

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