Thermal stability of GaAs tunnel junctions using carbon as a p-type dopant grown by metal-organic vapor phase epitaxy

Solar Energy Materials and Solar Cells

Volumn 50, Issue 1-4, 1998, Pages 281-288

  Gotoh, Shu ^a   Ueda, Takashi ^a   Kakinuma, Hiroaki ^a   Akiyama, Masahiro ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

GaAs tunnel junctions; p type dopant; Thermal stability

Indexed keywords

ANNEALING; CARBON; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; OPTIMIZATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; THERMODYNAMIC STABILITY; TUNNEL DIODES;

P TYPE DOPANT; STRUCTURAL OPTIMIZATION;

TUNNEL JUNCTIONS;

EID: 0031646588     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(97)00159-1     Document Type: Article

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