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Volumn 714, Issue , 2012, Pages 1-7
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Endogenous and exogenous hydrogen influence on amorphous silicon thin films analysis by pulsed radiofrequency glow discharge optical emission spectrometry
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Author keywords
Gas mixture argon hydrogen; Hydrogenated amorphous silicon; Optical emission spectrometry; Pulsed radiofrequency glow discharge; Thin film solar cells
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Indexed keywords
A-SI:H;
AMORPHOUS SILICON THIN FILMS;
ARGON DISCHARGES;
CONDUCTING MATERIALS;
DEPTH RESOLUTION;
DUTY CYCLES;
EMISSION INTENSITY;
ENHANCED EMISSION;
HYDROGENATED AMORPHOUS SILICON (A-SI:H);
OPTICAL EMISSION SPECTROMETRY;
OPTIMISATIONS;
OPTIMUM CONDITIONS;
P-DOPED LAYERS;
PENETRATION RATES;
PHOTOVOLTAIC INDUSTRY;
PRODUCTION COST;
PULSE FREQUENCIES;
PULSE PARAMETER;
PULSED RADIOFREQUENCY GLOW DISCHARGE;
RADIOFREQUENCY GLOW DISCHARGES;
SPUTTERING RATE;
THIN FILM SOLAR CELLS;
AMORPHOUS FILMS;
ARGON;
FILM GROWTH;
GLOW DISCHARGES;
HYDROGEN;
HYDROGENATION;
LIGHT EMISSION;
NANOSTRUCTURED MATERIALS;
OPTICAL EMISSION SPECTROSCOPY;
PHOSPHORUS;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON WAFERS;
SOLAR POWER GENERATION;
SPECTROMETRY;
THIN FILMS;
AMORPHOUS SILICON;
HYDROGEN;
SILICON;
AMORPHOUS SILICON THIN FILM;
ARTICLE;
CONDUCTOR;
CONTROLLED STUDY;
HYDROGENATION;
PRIORITY JOURNAL;
PROCESS OPTIMIZATION;
PULSED RADIOFREQUENCY GLOW DISCHARGE OPTICAL EMISSION SPECTROMETRY;
QUALITATIVE ANALYSIS;
SEMICONDUCTOR;
SPECTROMETRY;
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EID: 84855685695
PISSN: 00032670
EISSN: 18734324
Source Type: Journal
DOI: 10.1016/j.aca.2011.11.052 Document Type: Article |
Times cited : (8)
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References (26)
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