Room temperature oxidation of magnetron sputtered Si-C-N films

Applied Surface Science

Volumn 258, Issue 7, 2012, Pages 2944-2947

  Huger E ^a   Gao, D ^a   Markwitz, A ^b   Geckle, U ^c   Bruns, M ^c   Schmidt, H ^a  

^a CLAUSTHAL UNIVERSITY OF TECHNOLOGY   (Germany)

^b GNS SCIENCE   (New Zealand)

^c KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

Infra red spectroscopy; Oxidation, X ray reflectivity; Silicon carbonitrides

Indexed keywords

AMORPHOUS CARBON; AMORPHOUS FILMS; AMORPHOUS SILICON; ATOMIC FORCE MICROSCOPY; CARBON FILMS; CHEMICAL STABILITY; OXIDATION; POROSITY; REFLECTION; SCALE (DEPOSITS); SILICA; SILICON OXIDES; SPUTTER DEPOSITION; THIN FILMS; X RAYS;

CHEMICAL COMPOSITIONS; HIGH RESOLUTION; NANOPOROUS STRUCTURES; REACTIVE MAGNETRON CO-SPUTTERING; ROOM TEMPERATURE OXIDATION; SILICON CARBONITRIDES; X RAY REFLECTIVITY; X-RAY REFLECTOMETRY;

CRYSTAL ATOMIC STRUCTURE;

EID: 84855545974     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.11.012     Document Type: Article

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