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Volumn 100, Issue 1, 2012, Pages

Hysteretic anomalous Hall effect in a ferromagnetic, Mn-rich Ge:Mn nanonet

Author keywords

[No Author keywords available]

Indexed keywords

ANOMALOUS HALL EFFECTS; GE WAFER; HALL RESISTANCE; INTRINSIC SCATTERING; LASER ANNEALING; LIQUID-SOLID INTERFACES; NANO-NET; PULSE DURATIONS; PULSED LASER ANNEALING; SURFACE LAYERS;

EID: 84855525423     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3674981     Document Type: Article
Times cited : (13)

References (18)
  • 12
    • 84855539804 scopus 로고    scopus 로고
    • See supplementary material at http://dx.doi.org/10.1063/1.3674981 E-APPLAB-100-069201 for (1) further TEM measurements, (2) further magnetotransport results, and (3) further SQUID-magnetization measurements.
  • 14
    • 0019539454 scopus 로고
    • Interface instability and cell formation in ion-implanted and laser-annealed silicon
    • DOI 10.1063/1.329753
    • J. Narayan, J. Appl. Phys. 52, 1289 (1981). 10.1063/1.329753 (Pubitemid 11417503)
    • (1981) Journal of Applied Physics , vol.52 , Issue.3 PART 1 , pp. 1289-1293
    • Narayan, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.