Interplay between electrical transport properties of GeMn thin films and Ge substrates

Physical Review B - Condensed Matter and Materials Physics

Volumn 83, Issue 12, 2011, Pages

  Sircar, N ^a   Ahlers, S ^a   Majer, C ^a   Abstreiter, G ^a   Bougeard, D ^a,b  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 79961045987     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.83.125306     Document Type: Article

References (32)

1. D. Bougeard, S. Ahlers, A. Trampert, N. Sircar, and G. Abstreiter, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.97.237202 97, 237202 (2006). (Pubitemid 44888128)
2. M. Jamet, A. Barski, T. Devillers, V. Poydenot, R. Dujardin, P. Bayle-Guillemaud, J. Rothman, E. Bellet-Amalric, A. Marty, J. Cibert, R. Mattana, and S. Tatarenko, Nat. Mater. NMAACR 1476-1122 10.1038/nmat1686 5, 653 (2006). (Pubitemid 44157684)
3. D. Bougeard, N. Sircar, S. Ahlers, V. Lang, G. Abstreiter, A. Trampert, J. M. LeBeau, S. Stemmer, D. W. Saxey, and A. Cerezo, Nano Lett. NALEFD 1530-6984 10.1021/nl901928f 9, 3743 (2009).
4. A. P. Li, C. Zeng, K. van Benthem, M. F. Chisholm, J. Shen, S. V. S. Nageswara Rao, S. K. Dixit, L. C. Feldman, A. G. Petukhov, M. Foygel, and H. H. Weitering, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.75.201201 75, 201201 (2007).
5. Y. D. Park, A. T. Hanbicki, S. C. Erwin, C. S. Hellberg, J. M. Sullivan, J. E. Mattson, T. F. Ambrose, A. Wilson, G. Spanos, and B. T. Jonker, Science SCIEAS 0036-8075 10.1126/science.1066348 295, 651 (2002). (Pubitemid 34111817)
6. A. P. Li, J. F. Wendelken, J. Shen, L. C. Feldman, J. R. Thompson, and H. H. Weitering, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.72.195205 72, 195205 (2005). (Pubitemid 43029580)
7. S. Zhou, D. Bürger, A. Mücklich, C. Baumgart, W. Skorupa, C. Timm, P. Oesterlin, M. Helm, and H. Schmidt, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.81.165204 81, 165204 (2010).
8. J. X. Deng, Y. F. Tian, S. M. He, H. L. Bai, T. S. Xu, S. S. Yan, Y. Y. Dai, Y. X. Chen, G. L. Liu, and L. M. Mei, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3206664 95, 062513 (2009).
9. S. Zhou, D. Bürger, M. Helm, and H. Schmidt, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3257363 95, 172103 (2009).
10. F. J. Morin and J. P. Maita, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.94.1525 94, 1525 (1954).
11. M. B. Prince, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.92.681 92, 681 (1953).
12. O. Riss, A. Gerber, I. Y. Korenblit, A. Suslov, M. Passacantando, and L. Ottaviano, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.79.241202 79, 241202 (2009).
13. H. Fritzsche and K. Lark-Horovitz, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.113.999 113, 999 (1959).
14. see for example, J. S. Blakemore, Semiconductor Statistics, edited by, H. K. Henisch, (Pergamon, New York, 1962).
15. H. H. Woodbury and W. W. Tyler, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.100.659 100, 659 (1955).
16. C. M. Hurd, The Hall Effect in Metals and Alloys (Plenum, New York, 1972).
17. S. A. Solin, T. Thio, D. R. Hines, and J. J. Heremans, Science SCIEAS 0036-8075 10.1126/science.289.5484.1530 289, 1530 (2000).
18. M. M. Parish and P. B. Littlewood, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.72.094417 72, 094417 (2005). (Pubitemid 43022445)
19. M. M. Parish and P. B. Littlewood, Nature (London) NATUAS 0028-0836 10.1038/nature02073 426, 162 (2003). (Pubitemid 37442580)
20. J. Hu, M. M. Parish, and T. F. Rosenbaum, Phys. Rev. B PrBMDO 1098-0121 10.1103/PhysRevB.75.214203 75, 214203 (2007).
21. O. A. Golikova, B. Y. Moizhes, and L. S. Stil'bans, Sov. Phys. Solid State 3, 2259 (1962).
22. C. Goldberg and R. E. Davis, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.102.1254 102, 1254 (1956).
23. J. W. Gallagher and W. F. Love, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.161.793 161, 793 (1967).
24. R. F. Wick, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1721725 25, 741 (1954).
25. H. H. Jensen and H. Smith, J. Phys. C JPSOAW 0022-3719 10.1088/0022-3719/5/20/006 5, 2867 (1972).
26. N. Pinto, L. Morresi, M. Ficcadenti, R. Murri, F. D'Orazio, F. Lucari, L. Boarino, and G. Amato, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.72.165203 72, 165203 (2005). (Pubitemid 43024146)
27. H. Li, Y. Wu, Z. Guo, P. Luo, and S. Wang, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2375015 100, 103908 (2006). (Pubitemid 44853692)
28. C. Zeng, Y. Yao, Q. Niu, and H. H. Weitering, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.96.037204 96, 037204 (2006). (Pubitemid 43248167)
29. C. Zeng, Z. Zhang, K. van Benthem, M. F. Chisholm, and H. H. Weitering, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.100.066101 100, 066101 (2008). (Pubitemid 351391457)
30. R. Tsuchida, J. T. Asubar, Y. Jinbo, and N. Uchitomi, J. Cryst. Growth JCRGAE 0022-0248 10.1016/j.jcrysgro.2008.09.112 311, 937 (2009).
31. Y. D. Park, A. Wilson, A. T. Hanbicki, J. E. Mattson, T. Ambrose, G. Spanos, and B. T. Jonker, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1369151 78, 2739 (2001).
32. I.-S. Yu, M. Jamet, T. Devillers, A. Barski, P. Bayle-Guillemaud, C. Beigné, J. Rothman, V. Baltz, and J. Cibert, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.82.035308 82, 035308 (2010).