Mo/Cu(In, Ga)Se 2 back interface chemical and optical properties for ultrathin CIGSe solar cells

Applied Surface Science

Volumn 258, Issue 7, 2012, Pages 3058-3061

  Erfurth, F ^a   Jehl, Z ^a   Bouttemy, M ^b   Dahan, N ^c   Tran Van, P ^b   Gerard, I ^b   Etcheberry, A ^b   Greffet, J J ^c   Powalla, M ^d   Voorwinden, G ^e   Lincot, D ^a   Guillemoles, J F ^a   Naghavi, N ^a  

^a 6 quai Watier   (France)

^b UNIVERSITÉ DE VERSAILLES SAINT QUENTIN EN YVELINES   (France)

^c CNRS   (France)

^d ZENTRUM FÜR SONNENENERGIE UND WASSERSTOFF FORSCHUNG BADEN WÜRTTEMBERG ZSW   (Germany)

^e Wuerth Elektronik Research GmbH   (Germany)

Author keywords

Back contact; CIGSe based solar cells; Elipsometry; Interface; X ray photoelectron spectroscopy (XPS)

Indexed keywords

FILM THICKNESS; GALLIUM; INTERFACES (MATERIALS); LIGHT ABSORPTION; MOLYBDENUM; MOLYBDENUM COMPOUNDS; OPTICAL PROPERTIES; PHOTOELECTRONS; PHOTONS; REFLECTION; SOLAR CELLS; X RAY PHOTOELECTRON SPECTROSCOPY;

BACK CONTACT; CO-EVAPORATED; CU(IN , GA)SE2; ELIPSOMETRY; HIGHLY REFLECTIVE; MECHANICAL LIFTS; OPTICAL REFLECTIVITY; ULTRATHIN CIGSE;

SELENIUM COMPOUNDS;

EID: 84855520325     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.11.037     Document Type: Article

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