Carrier transport in self-organized InAs GaAs quantum-dot structures studied by single-dot spectroscopy

Physical Review B - Condensed Matter and Materials Physics

Volumn 73, Issue 15, 2006, Pages

  Moskalenko, E S ^a,b   Larsson, M ^a   Schoenfeld, W V ^c   Petroff, P M ^c   Holtz, P O ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b IOFFE INSTITUTE   (Russian Federation)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33646255951     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.73.155336     Document Type: Article

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26. For our calculations we have employed an in-plane hole effective mass of m* =0.155 m0 [J. Brübach, A. Y. Silov, J. E. M. Haverkort, W. v. d. Vleuten, and J. H. Wolter, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.59.10315 59, 10315 (1999)] for the case of ultrathin InAs quantum wells embedded between GaAs barriers. F is calculated as 0.65 Vdc (15 μm), where the factor of 0.65 accounts for the electric field reduction inside the structure.