The influence of substrate temperature on growth of para-sexiphenyl thin films on Ir{111} supported graphene studied by LEEM

Surface Science

Volumn 606, Issue 3-4, 2012, Pages 475-480

  Khokhar, Fawad S ^a   Hlawacek, Gregor ^a,b   Van Gastel, Raoul ^a   Zandvliet, Harold J W ^a   Teichert, Christian ^b   Poelsema, Bene ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b UNIVERSITY OF LEOBEN   (Austria)

Author keywords

Graphene; Iridium; LEED; Low energy electron microscope (LEEM); Organic thin film; Self assembly; Sexiphenyl(6P)

Indexed keywords

CONTINUOUS LAYERS; GROWTH DIRECTIONS; INITIAL STAGES; LOW ENERGY ELECTRON MICROSCOPES; LOW ENERGY ELECTRON MICROSCOPY; NUCLEATION AND GROWTH; ORGANIC THIN FILMS; PARA-SEXIPHENYL; PARA-SEXIPHENYL THIN FILMS; SEXIPHENYL(6P); STEP FLOW; SUBSTRATE TEMPERATURE; WETTING LAYER;

BALLOONS; DEPOSITION; ELECTRON MICROSCOPES; GRAPHENE; LOW ENERGY ELECTRON DIFFRACTION; MOLECULES; NEEDLES; NUCLEATION; THIN FILMS; VAPOR DEPOSITION; WETTING;

IRIDIUM;

EID: 84855465187     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2011.11.012     Document Type: Article

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