Enhanced infrared transmission of GZO film by rapid thermal annealing for Si thin film solar cells

Progress in Photovoltaics: Research and Applications

Volumn 20, Issue 1, 2012, Pages 111-116

  Jia, Haijun ^a,b   Matsui, Takuya ^a   Kondo, Michio ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b RandD DepartmentBaoding TianweiSolarfilmsCo Ltd   (China)

Author keywords

Ga doped ZnO (GZO); microcrystalline silicon and microcrystalline silicon germanium; rapid thermal annealing; thin film solar cells

Indexed keywords

ANNEALING TEMPERATURES; ELEVATED TEMPERATURE; FILM RESISTIVITY; GA-DOPED ZNO; HALL EFFECT MEASUREMENT; HIGH CONVERSION EFFICIENCY; INFRARED REGIONS; MICROCRYSTALLINE SI; ROOM TEMPERATURE; SPECTRAL RESPONSE; STRONG ENHANCEMENT; THIN FILM SOLAR CELLS; WIDE SPECTRAL RANGE;

CARRIER MOBILITY; CONVERSION EFFICIENCY; GALLIUM; GERMANIUM; HALL EFFECT; RAPID THERMAL ANNEALING; SILICON; THIN FILMS; ZINC OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 84855310013     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.1108     Document Type: Article

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