Highly-transparent ZnO:Ga through rapid thermal annealing for low-bandgap solar cell application

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2009, Pages 000744-000747

  Jia, Haijun ^a   Matsui, Takuya ^a   Kondo, Michio ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBER LAYERS; ART CONVERSION; BAND GAPS; ELEVATED TEMPERATURE; FILL FACTOR; FILM CONDUCTIVITY; GA-DOPED ZNO; LIGHT-TRAPPING; MICROCRYSTALLINE SI; OPTICAL TRANSMISSIONS; ROOM TEMPERATURE; SINGLE JUNCTION SOLAR CELLS; SOLAR-CELL APPLICATIONS; SPECTRAL RESPONSE; ZNO;

CONVERSION EFFICIENCY; GALLIUM; GERMANIUM; LIGHT TRANSMISSION; OPEN CIRCUIT VOLTAGE; RAPID THERMAL PROCESSING; SOLAR CELLS; SWITCHING CIRCUITS; ZINC OXIDE;

RAPID THERMAL ANNEALING;

EID: 77951619060     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2009.5411175     Document Type: Conference Paper

References (9)

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