Observation of tunneling current in semiconducting graphene p-n junctions

Journal of the Physical Society of Japan

Volumn 81, Issue 1, 2012, Pages

  Miyazaki, Hisao ^a,b   Lee, Michael V ^a   Li, Song Lin ^a   Hiura, Hidefumi ^a,c   Kanda, Akinobu ^b,d   Tsukagoshi, Kazuhito ^a,b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c NEC CORPORATION   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Bilayer graphene; Field effect; P n junction; Tunneling effect

Indexed keywords

EID: 84855274939     PISSN: 00319015     EISSN: 13474073     Source Type: Journal    
DOI: 10.1143/JPSJ.81.014708     Document Type: Article

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