Roughening and smoothing behavior of single crystal Si by low energy Ar + ion bombardment

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 272, Issue , 2012, Pages 206-209

  Pahlovy, S A ^a   Mahmud, S F ^a   Yanagimoto, K ^a   Aikawa, N ^a   Miyamoto, I ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Ion beam; Roughening; Si cleaved surface; Smoothing; Sputtering

Indexed keywords

ATOMIC FORCE MICROSCOPES; BEAM ENERGIES; DYNAMIC SCALING; DYNAMIC SCALING THEORY; GROWTH EXPONENT; INITIAL STAGES; ION BEAM ENERGY; ION-BEAM SPUTTERING; LINEAR DIFFUSION EQUATION; LOW-ENERGY AR; ONE-DIMENSIONAL SIMULATIONS; ROUGH SURFACES; ROUGHENING; ROUGHNESS EXPONENT; SI SURFACES; SI WAFER; SINGLE-CRYSTAL SI; SMOOTH SURFACE; SMOOTHING;

ARGON; ATOMIC FORCE MICROSCOPY; ION BEAMS; ION BOMBARDMENT; PARTIAL DIFFERENTIAL EQUATIONS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SINGLE CRYSTALS; SPUTTERING; SURFACE MORPHOLOGY; SURFACE ROUGHNESS;

SILICON WAFERS;

EID: 84655168044     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2011.01.066     Document Type: Conference Paper

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