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Applied Physics Letters

Volumn 98, Issue 13, 2011, Pages

Dislocation density-dependent quality factors in InGaN quantum dot containing microdisks

(6) El Ella, H A R a Rol, F b Kappers, M J a Russell, K J b Hu, E L b Oliver, R A a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b HARVARD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITIES; HARD MASKS; IDENTICAL STRUCTURES; INGAN QUANTUM DOTS; LOW-DISLOCATION DENSITY; MICRODISKS; MICROPHOTOLUMINESCENCE; PHOTOELECTROCHEMICALS; QUALITY FACTORS; QUANTUM DOT; SPECTRAL LINE;

GALLIUM COMPOUNDS; SILICON COMPOUNDS; SPECTROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79953757643 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3567545 Document Type: Article

Times cited : (10)

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