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Physica B: Condensed Matter

Volumn 407, Issue 3, 2012, Pages 515-518

Electronic structures of zigzag AlN, GaN nanoribbons and Al xGa 1-xN nanoribbon heterojunctions: First-principles study

(3) Dai, Yurong a Chen, Xiaojie a Jiang, Chenghuan b

a SOUTHEAST UNIVERSITY (China)

b State Key Laboratory of Media Convergence Production Technology and Systems (China)

Author keywords

Band gap engineering; Electronic structure; First principles; Nanoribbon

Indexed keywords

ALN; BAND GAP ENGINEERING; ELECTRONIC AND STRUCTURAL PROPERTIES; FIRST-PRINCIPLES; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES STUDY; INDIRECT BAND GAP; MONOLAYER STRUCTURES; NANORIBBON; NANORIBBONS; QUASI-ONE-DIMENSION STRUCTURE; TUNABLE BAND-GAP;

ALUMINUM; ALUMINUM GALLIUM NITRIDE; CALCULATIONS; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM NITRIDE; HETEROJUNCTIONS; MONOLAYERS; OPTOELECTRONIC DEVICES;

ALUMINUM NITRIDE;

EID: 84655160848 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2011.11.026 Document Type: Article

Times cited : (19)

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