AlN, GaN, AlxGa1 - xN nanotubes and GaN/AlxGa1 - xN nanotube heterojunctions

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 374, Issue 6, 2010, Pages 877-881

  de Almeida, James M ^a   Kar, Tapas ^b   Piquini, Paulo ^c  

^a Universidade Federal   (Brazil)

^b UTAH STATE UNIVERSITY   (United States)

^c FEDERAL UNIVERSITY OF SANTA MARIA   (Brazil)

Author keywords

Alloys; Band gap engineering; Electronic structure; Heterojunctions; III V nanotubes

Indexed keywords

ALLOYING; ALUMINUM ALLOYS; ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; BINARY ALLOYS; DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM NITRIDE; HETEROJUNCTIONS; III-V SEMICONDUCTORS; INDIUM ALLOYS; NANOTUBES; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR SUPERLATTICES; WIDE BAND GAP SEMICONDUCTORS;

BAND GAP ENGINEERING; BAND-GAP BOWINGS; ELECTRONIC AND STRUCTURAL PROPERTIES; NEAR-ULTRAVIOLET REGIONS; SEMICONDUCTOR COMPONENTS; SEMICONDUCTOR OPTOELECTRONIC DEVICES; TYPE I BAND ALIGNMENTS; VALENCE BAND OFFSETS;

GALLIUM ALLOYS;

EID: 73249149487     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2009.11.084     Document Type: Article

References (47)

1. Steigerwald D.A., Bhat J.C., Collins D., Fletcher R.M., Holcomb M.O., Ludowise M.J., Martin P.S., and Rudaz S.L. IEEE J. Select. Topics Quantum Electron. 8 (2002) 310
2. Ichimura I., Maeda F., Osato K., Yamamoto K., and Kasami Y. Jpn. J. Appl. Phys. 39 (2000) 937
3. Khan M.A., Hu X., Simin G., Yang J., Gaska R., and Shur M.S. Appl. Phys. Lett. 77 (2000) 1339
4. Rajan S., Chini A., and Wong M.H. J. Appl. Phys. 102 (2007) 044501
5. Goldberger J., He R., Zhang Y., Lee S., Yan H., Choi H.-J., and Yang P. Nature 422 (2003) 599
6. Huang Y., Duan X., Cui Y., and Lieber C.M. Nano Lett. 2 (2002) 101
7. Andreev A.D., and O'Reilly E.P. Phys. Rev. B 62 (2000) 15851
8. Duan X., and Lieber C.M. J. Am. Chem. Soc. 122 (2000) 188
9. Balasubramanian C., Bellucci S., Castrucci P., De Crescenzi M., and Bhoraskar S.V. Chem. Phys. Lett. 383 (2004) 188
10. Jung W.-G., Jung S.-H., Kung P., and Razeghi M. Nanotechnology 17 (2006) 54
11. Lee S.M., Lee Y.H., Hwang Y.G., Elsner J., Porezag D., and Frauenheim T. Phys. Rev. B 60 (1999) 7788
12. Zhao M., Xia Y., Zhang D., and Mei L. Phys. Rev. B 68 (2003) 235415
13. Moradian R., Azadi S., and Farahani S.V. Phys. Lett. A 372 (2008) 6535
14. Pan H., Feng Y.P., and Lin J. J. Chem. Theory Comput. 4 (2008) 703
15. Johnson J.C., Choi H.-J., Knutsen K.P., Schaller R.D., Yang P., and Saykally R.J. Nat. Mater. 1 (2002) 106
16. Tang Y.B., Chen Z.H., Song H.S., Lee C.S., Cong H.T., Cheng H.M., Zhang W.J., Bello I., and Lee S.T. Nano Lett. 8 (2008) 4191
17. Zhukovskii Y.F., Pugno N., Popov A.I., Balasubramanian C., and Bellucci S. J. Phys.: Condens. Mater. 19 (2007) 395021
18. Kang J.W., and Hwang H.J. Molec. Simulat. 30 (2004) 29
19. Colussi M.J., Baierle R.J., and Miwa R.H. J. Appl. Phys. 104 (2008) 033712
20. Thesing L.A., Kar T., and Piquini P. Nanotechnology 17 (2006) 1637
21. Hohenberg P., and Kohn W. Phys. Rev. 136 (1964) B864
22. Kohn W., and Sham L.J. Phys. Rev. 140 (1965) A1133
23. Soler J.M., Artacho E., Gale J.D., García A., Junquera J., Ordejón P., and Sánchez-Portal D. J. Phys.: Condens. Mater. 14 (2002) 2745
24. Ceperley D.M., and Alder B.J. Phys. Rev. Lett. 45 (1980) 566
25. Perdew J.P., and Zunger A. Phys. Rev. B 23 (1981) 5048
26. Sankey O.F., and Niklewski D.J. Phys. Rev. B 40 (1989) 3979
27. Troullier N., and Martins J.L. Phys. Rev. B 43 (1991) 1993
28. Louie S.G., Froyen S., and Cohen M.L. Phys. Rev. B 26 (1982) 1738
29. Monkhorst H.J., and Pack J.D. Phys. Rev. B 13 (1976) 5188
30. Vurgaftman I., Meyer J.R., and Ram-Mohan L.R. J. Appl. Phys. 89 (2001) 5815
31. Stampfl C., and Van de Walle C.G. Phys. Rev. B 59 (1999) 5521
32. Schmidt T.M., Baierle R.J., Piquini P., and Fazzio A. Phys. Rev. B 67 (2003) 113407
33. Marques M., Teles L.K., and Ferreira L.G. Phys. Rev. B 75 (2007) 033201
34. Ismail-Beigi S. Phys. Rev. B 77 (2008) 035306
35. Bergmann M.J., and Casey Jr. H.C. J. Appl. Phys. 84 (1998) 1196 and references therein
36. Levine Z.H., and Allan D.C. Phys. Rev. Lett. 63 (1989) 1719
37. Drummond N.D., Williamson A.J., Needs R.J., and Galli G. Phys. Rev. Lett. 95 (2005) 096801
38. Melnikov D.V., and Chelikowsky J.R. Solid State Commun. 127 (2003) 361
39. Sökeland F., Rohlfing M., Kruger P., and Pollmann J. Phys. Rev. B 68 (2008) 075203
40. Bougrov V., Levinshtein M.E., Rumyantsev S.L., and Zubrilov A. In: Levinshtein M.E., Rumyantsev S.L., and Shur M.S. (Eds). Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe (2001), John Wiley & Sons Inc., New York, NY
41. Christensen N.E., and Gorczyca I. Phys. Rev. B 50 (1994) 4397
42. Dandrea R.G., Duke C.B., and Zunger A. J. Vac. Sci. Technol. B 10 (1992) 1744
43. Králik B., Chang E.K., and Louie S.G. Phys. Rev. B 57 (1998) 7027
44. Alkauskas A., Broqvist B., Devynck F., and Pasquarello A. Phys. Rev. Lett. 101 (2008) 106802
45. Ribeiro Jr. M., Fonseca L.R.C., and Ferreira L.G. Phys. Rev. B 79 (2009) 241312R
46. Li Y.-H., Walsh A., Chen S., Yin W.-J., Yang J.-H., Li J., Da Silva J.L.F., Gong X.G., and Wei S.-H. Appl. Phys. Lett. 94 (2009) 212109
47. Wei S.-H., and Zunger A. Appl. Phys. Lett. 69 (1996) 2719