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Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7660, Issue , 2010, Pages

Carrier lifetime measurements in InAs/GaSb strained layer superlattice structures

(5) Svensson, Stefan P a Donetsky, Dmitry b Wang, Ding b Maloney, Patrick c Belenky, Gregory b

a U S ARMY RESEARCH LABORATORY (United States)

b Stony Brook University (United States)

c US Army Night Vis Electron S (United States)

Author keywords

carrier lifetime; Infrared detector; MCT; type II superlattice

Indexed keywords

ABSORPTION WAVELENGTHS; CARRIER LIFETIME MEASUREMENTS; EXCESS CARRIER CONCENTRATION; EXCITATION POWER; FREQUENCY DOMAINS; INAS; INAS/GASB; INTERBAND ABSORPTION; LIFETIME MEASUREMENTS; MCT; MERCURY CADMIUM TELLURIDE; MID-INFRARED RANGE; MINORITY CARRIER LIFETIMES; ORDER OF MAGNITUDE; PER UNIT LENGTH; PL KINETICS; STRAINED LAYER SUPERLATTICE; TIME-RESOLVED; TYPE II SUPERLATTICE;

ABSORPTION; CADMIUM; CADMIUM COMPOUNDS; CADMIUM TELLURIDE; CARRIER CONCENTRATION; DETECTORS; GALLIUM ALLOYS; INDIUM ANTIMONIDES; INDIUM ARSENIDE; INFRARED DETECTORS; INFRARED RADIATION; MERCURY (METAL); MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; QUANTUM WELL LASERS; SUPERLATTICES;

CARRIER LIFETIME;

EID: 79953707372 PISSN: 0277786X EISSN: None Source Type: Conference Proceeding
DOI: 10.1117/12.849514 Document Type: Conference Paper

Times cited : (12)

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