Electroluminescence properties of Eu-doped GaN-based light-emitting diodes grown by organometallic vapor phase epitaxy

Materials Research Society Symposium Proceedings

Volumn 1342, Issue , 2012, Pages 9-14

  Nishikawa, Atsushi ^a   Furukawa, Naoki ^a   Lee, Dong Gun ^a   Kawabata, Kosuke ^a   Matsuno, Takanori ^a   Terai, Yoshikazu ^a   Fujiwara, Yasufumi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; APPLIED VOLTAGES; ELECTROLUMINESCENCE PROPERTIES; EXTERNAL QUANTUM EFFICIENCY; GAN-BASED LIGHT-EMITTING DIODES; INJECTED CURRENT; LED STRUCTURE; LIGHT OUTPUT POWER; LUMINESCENCE PROPERTIES; ORGANOMETALLIC VAPOR PHASE EPITAXY; POWER EFFICIENCY;

ELECTROLUMINESCENCE; EUROPIUM; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LUMINESCENCE; OPTIMIZATION; ORGANOMETALLICS; VAPOR PHASE EPITAXY; VAPORS;

LIGHT EMITTING DIODES;

EID: 84455182325     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/opl.2011.994     Document Type: Conference Paper

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