Atmospheric pressure growth of Eu-doped GaN by organometallic vapor phase epitaxy

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 2, 2011, Pages 445-448

  Furukawa, Naoki ^a   Nishikawa, Atsushi ^a   Kawasaki, Takashi ^a   Terai, Yoshikazu ^a   Fujiwara, Yasufumi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Eu; GaN; growth pressure; OMVPE; photoluminescence

Indexed keywords

CRYSTAL QUALITIES; ENERGY TRANSFER EFFICIENCY; EU; EU-DOPED GAN; GAN; GROWTH PRESSURE; HOST MATERIALS; LOW PRESSURES; LUMINESCENCE PROPERTIES; OMVPE; OPTICALLY ACTIVE; ORGANOMETALLIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE INTENSITIES; PL INTENSITY; TEMPERATURE DEPENDENT; TIME-RESOLVED PL MEASUREMENT;

ATMOSPHERIC PRESSURE; ENERGY TRANSFER; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; ORGANOMETALLICS; PHOTOLUMINESCENCE; VAPOR PHASE EPITAXY; VAPORS;

EUROPIUM;

EID: 79751504488     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201000598     Document Type: Article

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