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Optical Materials

Volumn 33, Issue 7, 2011, Pages 1071-1074

Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy

(5) Nishikawa, A a Furukawa, N a Kawasaki, T a Terai, Y a Fujiwara, Y a

a OSAKA UNIVERSITY (Japan)

Author keywords

Europium; GaN; LED; OMVPE

Indexed keywords

ATMOSPHERIC PRESSURE; ELECTROLUMINESCENCE; ENERGY TRANSFER; EUROPIUM; III-V SEMICONDUCTORS; LIGHT; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; ORGANIC LIGHT EMITTING DIODES (OLED); ORGANOMETALLICS;

ENERGY TRANSFER EFFICIENCY; EXTERNAL QUANTUM EFFICIENCY; GAN-BASED LIGHT-EMITTING DIODES; GROWTH CONDITIONS; GROWTH PRESSURE; LIGHT OUTPUT POWER; LIGHTING CONDITIONS; ORGANO-METALLIC VAPOR-PHASE EPITAXIES;

GALLIUM NITRIDE;

EID: 79955543343 PISSN: 09253467 EISSN: None Source Type: Journal
DOI: 10.1016/j.optmat.2010.10.010 Document Type: Conference Paper

Times cited : (24)

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