Nature and excitation mechanism of the emission-dominating minority Eu-center in GaN grown by organometallic vapor-phase epitaxy

Materials Research Society Symposium Proceedings

Volumn 1342, Issue , 2012, Pages 21-26

  Poplawsky, Jonathan ^a   Woodward, Nathaniel ^a   Nishikawa, Atsushi ^b   Fujiwara, Yasufumi ^b   Dierolf, Volkmar ^a  

^a LEHIGH UNIVERSITY   (United States)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM EXCITATION; ELECTRON HOLE; EXCITATION MECHANISMS; EXCITATION METHODS; EXCITATION PATHWAYS; EXPERIMENTAL TECHNIQUES; IN-SITU; ORGANOMETALLIC VAPOR PHASE EPITAXY; SITE SELECTIVE;

ELECTRON BEAMS; EPITAXIAL GROWTH; EUROPIUM; GALLIUM NITRIDE; IONS; IRRADIATION; ORGANOMETALLICS; VAPORS;

LASER EXCITATION;

EID: 84455181547     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/opl.2011.1049     Document Type: Conference Paper

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