Time evolution studies of the electrostatic surface potential of low-temperature-grown GaAs using electrostatic force microscopy

Journal of Applied Physics

Volumn 97, Issue 4, 2005, Pages

  Howell, S W ^a,b   Janes, D B ^a  

^a PURDUE UNIVERSITY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATIC FORCE MICROSCOPES; SCANNING PROBE MICROSCOPES (SPM); SURFACE OXIDES; SURFACE POTENTIAL;

BAND STRUCTURE; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; ELECTROSTATICS; GOLD; HOLE MOBILITY; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; OXIDES; SCANNING TUNNELING MICROSCOPY; STOICHIOMETRY; SURFACE PHENOMENA; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM COMPOUNDS;

EID: 13744261628     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1844615     Document Type: Article

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