-
1
-
-
0035793378
-
Functional nanoscale electronic devices assembled using silicon nanowire building blocks
-
Cui Y, Lieber CM: Functional nanoscale electronic devices assembled using silicon nanowire building blocks. Science 2001, 291:851.
-
(2001)
Science
, vol.291
, pp. 851
-
-
Cui, Y.1
Lieber, C.M.2
-
2
-
-
0035827304
-
Room-temperature ultraviolet nanowire nanolasers
-
Huang MH, Mao S, Feick H, Yan H, Wu Y, Kind H, Weber E, Russo R, Yang P: Room-temperature ultraviolet nanowire nanolasers. Science 2001, 292:1897.
-
(2001)
Science
, vol.292
, pp. 1897
-
-
Huang, M.H.1
Mao, S.2
Feick, H.3
Yan, H.4
Wu, Y.5
Kind, H.6
Weber, E.7
Russo, R.8
Yang, P.9
-
3
-
-
77249164255
-
Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications
-
Kelzenberg MD, Boettcher SW, Petykiewicz JA, Turner-Evans DB, Putnam MC, Warren EL, Spurgeon JM, Briggs RM, Lewis NS, Atwater HA: Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications. Nat Mater 2010, 9:239.
-
(2010)
Nat Mater
, vol.9
, pp. 239
-
-
Kelzenberg, M.D.1
Boettcher, S.W.2
Petykiewicz, J.A.3
Turner-Evans, D.B.4
Putnam, M.C.5
Warren, E.L.6
Spurgeon, J.M.7
Briggs, R.M.8
Lewis, N.S.9
Atwater, H.A.10
-
4
-
-
35348984409
-
Coaxial Silicon Nanowires As Solar Cells and Nanoelectronic Power Sources
-
Tian B, Zheng X, Kempa TJ, Fang Y, Yu N, Yu G, Huang J, Lieber CM: Coaxial silicon nanowires as solar cells and nanoelectronic power sources. Nature 2007, 449:885.
-
(2007)
Nature
, vol.449
, pp. 885
-
-
Tian, B.1
Zheng, X.2
Kempa, T.J.3
Fang, Y.4
Yu, N.5
Yu, G.6
Huang, J.7
Lieber, C.M.8
-
5
-
-
38049143961
-
Enhanced thermoelectric performance of rough silicon nanowires
-
Hochbaum AI, Chen RK, Delgado RD, Liang WJ, Garnett EC, Najarian M, Majumdar A, Yang PD: Enhanced thermoelectric performance of rough silicon nanowires. Nature 2008, 451:163.
-
(2008)
Nature
, vol.451
, pp. 163
-
-
Hochbaum, A.I.1
Chen, R.K.2
Delgado, R.D.3
Liang, W.J.4
Garnett, E.C.5
Najarian, M.6
Majumdar, A.7
Yang, P.D.8
-
6
-
-
34250850307
-
Interfacing silicon nanowires with mammalian cells
-
Kim W, Ng JK, Kunitake ME, Conklin BR, Yang PD: Interfacing silicon nanowires with mammalian cells. J Am Chem Soc 2007, 129:7228.
-
(2007)
J Am Chem Soc
, vol.129
, pp. 7228
-
-
Kim, W.1
Ng, J.K.2
Kunitake, M.E.3
Conklin, B.R.4
Yang, P.D.5
-
7
-
-
77952359259
-
Semiconductor nanowire: What's next
-
Yang PD, Yan R, Fardy M: Semiconductor nanowire: what's next. Nano Lett 2010,10:1529.
-
(2010)
Nano Lett
, vol.10
, pp. 1529
-
-
Yang, P.D.1
Yan, R.2
Fardy, M.3
-
8
-
-
77952399699
-
Nonlithographic patterning and metal-assisted chemical etching for manufacturing of tunable light-emitting silicon nanowire arrays
-
Chern W, Hsu K, Chun IS, de Azeredo BP, Ahmed N, Kim K, Zuo J, Fang N, Ferreira P, Li X: Nonlithographic patterning and metal-assisted chemical etching for manufacturing of tunable light-emitting silicon nanowire arrays. Nano Lett 2010, 10:1582.
-
(2010)
Nano Lett
, vol.10
, pp. 1582
-
-
Chern, W.1
Hsu, K.2
Chun, I.S.3
de Azeredo, B.P.4
Ahmed, N.5
Kim, K.6
Zuo, J.7
Fang, N.8
Ferreira, P.9
Li, X.10
-
9
-
-
36449007952
-
Effect of one monolayer of surface gold atoms on the epitaxial-growth of inas nanowhiskers
-
Yazawa M, Koguchi M, Muto A, Ozawa M, Hiruma K: Effect of one monolayer of surface gold atoms on the epitaxial-growth of inas nanowhiskers. Appl Phys Lett 1992, 61:2051.
-
(1992)
Appl Phys Lett
, vol.61
, pp. 2051
-
-
Yazawa, M.1
Koguchi, M.2
Muto, A.3
Ozawa, M.4
Hiruma, K.5
-
10
-
-
0029484212
-
Solution-liquid-solid growth of cryatalline III-V semiconductors-an analogy to vapour-liquid-solid growth
-
Trentler TJ, Hickman KM, Goel SC, Viano AM, Gibbons PC, Buhro WE: Solution-liquid-solid growth of cryatalline III-V semiconductors-an analogy to vapour-liquid-solid growth. Science 1995, 270:1791.
-
(1995)
Science
, vol.270
, pp. 1791
-
-
Trentler, T.J.1
Hickman, K.M.2
Goel, S.C.3
Viano, A.M.4
Gibbons, P.C.5
Buhro, W.E.6
-
11
-
-
0029321505
-
Synthesis and characterization of carbide nanorods
-
Dai HJ, Wong EW, Lu YZ, Fan SS, Lieber CM: Synthesis and characterization of carbide nanorods. Nature 1995, 375:769.
-
(1995)
Nature
, vol.375
, pp. 769
-
-
Dai, H.J.1
Wong, E.W.2
Lu, Y.Z.3
Fan, S.S.4
Lieber, C.M.5
-
12
-
-
77949275137
-
Nanowire transistors without junctions
-
Colinge J, Lee C, Afzalian A, Akhavan ND, Yan R, Ferain I, Razavi P, O'Neill B, Blake A, White M, Kelleher A, McCarthy B, Murphy R: Nanowire transistors without junctions. Nat Nanotechnol 2010, 5:225.
-
(2010)
Nat Nanotechnol
, vol.5
, pp. 225
-
-
Colinge, J.1
Lee, C.2
Afzalian, A.3
Akhavan, N.D.4
Yan, R.5
Ferain, I.6
Razavi, P.7
O'Neill, B.8
Blake, A.9
White, M.10
Kelleher, A.11
McCarthy, B.12
Murphy, R.13
-
13
-
-
77955188131
-
Self-assembly nanowires find their place
-
Gates BD: Self-assembly nanowires find their place. Nat Nanotechnol 2010, 5:484.
-
(2010)
Nat Nanotechnol
, vol.5
, pp. 484
-
-
Gates, B.D.1
-
14
-
-
33749683622
-
Direct spectroscopic evidence for the formation of one-dimensional wetting wires during the growth of InGaAs/GaAs quantum dot chains
-
Wang X, Wang ZM, Liang B, Salamo GJ, Shih CK: Direct spectroscopic evidence for the formation of one-dimensional wetting wires during the growth of InGaAs/GaAs quantum dot chains. Nano Lett 2006, 6:1847.
-
(2006)
Nano Lett
, vol.6
, pp. 1847
-
-
Wang, X.1
Wang, Z.M.2
Liang, B.3
Salamo, G.J.4
Shih, C.K.5
-
15
-
-
1842424395
-
Atom-resolved scanning tunneling microscopy of (In,Ga)As quantum wires on GaAs(311)A
-
Wen H, Wang ZM, Salamo GJ: Atom-resolved scanning tunneling microscopy of (In,Ga)As quantum wires on GaAs(311)A. Appl Phys Lett 2004,84:1756.
-
(2004)
Appl Phys Lett
, vol.84
, pp. 1756
-
-
Wen, H.1
Wang, Z.M.2
Salamo, G.J.3
-
16
-
-
14644433028
-
Directed self-assembly of Ge nanostructures on very high index, highly anisotropic Si (hkl) surfaces
-
Ohmori K, Foo YL, Hong S, Wen JG, Greene JE, Petrov I: Directed self-assembly of Ge nanostructures on very high index, highly anisotropic Si (hkl) surfaces. Nano Lett 2005, 5:369.
-
(2005)
Nano Lett
, vol.5
, pp. 369
-
-
Ohmori, K.1
Foo, Y.L.2
Hong, S.3
Wen, J.G.4
Greene, J.E.5
Petrov, I.6
-
17
-
-
0001712799
-
Self-assembled Ge nanowires grown on Si(113)
-
Omi H, Ogino T: Self-assembled Ge nanowires grown on Si(113). Appl Phys Lett 1997, 71:2163.
-
(1997)
Appl Phys Lett
, vol.71
, pp. 2163
-
-
Omi, H.1
Ogino, T.2
-
18
-
-
0000712804
-
New insights on SiGe growth instabilities
-
Berbezier I, Gallas B, Lapena L, Fernandez J, Derrien J, Joyce B: New insights on SiGe growth instabilities. J Vac Sci Technol B 1998, 16:1582.
-
(1998)
J Vac Sci Technol B
, vol.16
, pp. 1582
-
-
Berbezier, I.1
Gallas, B.2
Lapena, L.3
Fernandez, J.4
Derrien, J.5
Joyce, B.6
-
19
-
-
0038750611
-
Morphological evolution of SiGe layers
-
Berbezier I, Ronda A, Volpi F, Portavoce A: Morphological evolution of SiGe layers. Surf Sci 2003, 531:231.
-
(2003)
Surf Sci
, vol.531
, pp. 231
-
-
Berbezier, I.1
Ronda, A.2
Volpi, F.3
Portavoce, A.4
-
20
-
-
33846395463
-
Early stage of Ge growth on Si(001) vicinal surfaces with an 8 degrees miscut along [110]
-
Szkutnik PD, Sgarlata A, Balzarotti A, Motta N, Ronda A, Berbezier I: Early stage of Ge growth on Si(001) vicinal surfaces with an 8 degrees miscut along [110]. Phys Rev B 2007, 75:33305.
-
(2007)
Phys Rev B
, vol.75
, pp. 33305
-
-
Szkutnik, P.D.1
Sgarlata, A.2
Balzarotti, A.3
Motta, N.4
Ronda, A.5
Berbezier, I.6
-
21
-
-
77949675002
-
0.20 nanoripples on Si(1110) substrates
-
0.20 nanoripples on Si(1110) substrates. Appl Phys Lett 2010, 96:103107.
-
(2010)
Appl Phys Lett
, vol.96
, pp. 103107
-
-
Chen, G.1
Wintersberger, E.2
Vastola, G.3
Groiss, H.4
Stangl, J.5
Jantsch, W.6
Schäffler, F.7
-
23
-
-
0037166842
-
Critical role of the surface reconstruction in the thermodynamic stability of {105} Ge pyramids on Si(001)
-
Raiteri P, Migas DB, Miglio L, Rastelli A, von Känel H: Critical role of the surface reconstruction in the thermodynamic stability of {105} Ge pyramids on Si(001). Phys Rev Lett 2002, 88:256103.
-
(2002)
Phys Rev Lett
, vol.88
, pp. 256103
-
-
Raiteri, P.1
Migas, D.B.2
Miglio, L.3
Rastelli, A.4
von Känel, H.5
-
24
-
-
0033521177
-
Transition states between pyramids and domes during Ge/Si island growth
-
Ross FM, Tromp RM, Reuter MC: Transition states between pyramids and domes during Ge/Si island growth. Science 1999, 286:1931.
-
(1999)
Science
, vol.286
, pp. 1931
-
-
Ross, F.M.1
Tromp, R.M.2
Reuter, M.C.3
-
25
-
-
0000193202
-
Evolution of Ge/Si(100) islands: Island size and temperature dependence
-
Chaparro SA, Zhang Y, Drucker J, Chandrasekhar D, Smith DJ: Evolution of Ge/Si(100) islands: Island size and temperature dependence. J Appl Phys 2000,87:2245.
-
(2000)
J Appl Phys
, vol.87
, pp. 2245
-
-
Chaparro, S.A.1
Zhang, Y.2
Drucker, J.3
Chandrasekhar, D.4
Smith, D.J.5
-
26
-
-
42749107912
-
Simulation of Ge/Si intermixing during heteroepitaxy
-
Wagner RJ, Gulari E: Simulation of Ge/Si intermixing during heteroepitaxy. Phys Rev B 2004, 69:195312.
-
(2004)
Phys Rev B
, vol.69
, pp. 195312
-
-
Wagner, R.J.1
Gulari, E.2
-
27
-
-
0000082066
-
Multiple layers of self-asssembled Ge/Si islands: Photoluminescence, strain fields, material interdiffusion, and island formation
-
Schmidt OG, Eberl K: Multiple layers of self-asssembled Ge/Si islands: photoluminescence, strain fields, material interdiffusion, and island formation. Phys Rev B 2000, 61:13721.
-
(2000)
Phys Rev B
, vol.61
, pp. 13721
-
-
Schmidt, O.G.1
Eberl, K.2
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