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Volumn 6, Issue 1, 2011, Pages

A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; FABRICATION; GERMANIUM; NANOWIRES; SELF ASSEMBLY; SILICON;

EID: 84255182759     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-322     Document Type: Article
Times cited : (14)

References (27)
  • 1
    • 0035793378 scopus 로고    scopus 로고
    • Functional nanoscale electronic devices assembled using silicon nanowire building blocks
    • Cui Y, Lieber CM: Functional nanoscale electronic devices assembled using silicon nanowire building blocks. Science 2001, 291:851.
    • (2001) Science , vol.291 , pp. 851
    • Cui, Y.1    Lieber, C.M.2
  • 7
    • 77952359259 scopus 로고    scopus 로고
    • Semiconductor nanowire: What's next
    • Yang PD, Yan R, Fardy M: Semiconductor nanowire: what's next. Nano Lett 2010,10:1529.
    • (2010) Nano Lett , vol.10 , pp. 1529
    • Yang, P.D.1    Yan, R.2    Fardy, M.3
  • 8
    • 77952399699 scopus 로고    scopus 로고
    • Nonlithographic patterning and metal-assisted chemical etching for manufacturing of tunable light-emitting silicon nanowire arrays
    • Chern W, Hsu K, Chun IS, de Azeredo BP, Ahmed N, Kim K, Zuo J, Fang N, Ferreira P, Li X: Nonlithographic patterning and metal-assisted chemical etching for manufacturing of tunable light-emitting silicon nanowire arrays. Nano Lett 2010, 10:1582.
    • (2010) Nano Lett , vol.10 , pp. 1582
    • Chern, W.1    Hsu, K.2    Chun, I.S.3    de Azeredo, B.P.4    Ahmed, N.5    Kim, K.6    Zuo, J.7    Fang, N.8    Ferreira, P.9    Li, X.10
  • 9
    • 36449007952 scopus 로고
    • Effect of one monolayer of surface gold atoms on the epitaxial-growth of inas nanowhiskers
    • Yazawa M, Koguchi M, Muto A, Ozawa M, Hiruma K: Effect of one monolayer of surface gold atoms on the epitaxial-growth of inas nanowhiskers. Appl Phys Lett 1992, 61:2051.
    • (1992) Appl Phys Lett , vol.61 , pp. 2051
    • Yazawa, M.1    Koguchi, M.2    Muto, A.3    Ozawa, M.4    Hiruma, K.5
  • 10
    • 0029484212 scopus 로고
    • Solution-liquid-solid growth of cryatalline III-V semiconductors-an analogy to vapour-liquid-solid growth
    • Trentler TJ, Hickman KM, Goel SC, Viano AM, Gibbons PC, Buhro WE: Solution-liquid-solid growth of cryatalline III-V semiconductors-an analogy to vapour-liquid-solid growth. Science 1995, 270:1791.
    • (1995) Science , vol.270 , pp. 1791
    • Trentler, T.J.1    Hickman, K.M.2    Goel, S.C.3    Viano, A.M.4    Gibbons, P.C.5    Buhro, W.E.6
  • 13
    • 77955188131 scopus 로고    scopus 로고
    • Self-assembly nanowires find their place
    • Gates BD: Self-assembly nanowires find their place. Nat Nanotechnol 2010, 5:484.
    • (2010) Nat Nanotechnol , vol.5 , pp. 484
    • Gates, B.D.1
  • 14
    • 33749683622 scopus 로고    scopus 로고
    • Direct spectroscopic evidence for the formation of one-dimensional wetting wires during the growth of InGaAs/GaAs quantum dot chains
    • Wang X, Wang ZM, Liang B, Salamo GJ, Shih CK: Direct spectroscopic evidence for the formation of one-dimensional wetting wires during the growth of InGaAs/GaAs quantum dot chains. Nano Lett 2006, 6:1847.
    • (2006) Nano Lett , vol.6 , pp. 1847
    • Wang, X.1    Wang, Z.M.2    Liang, B.3    Salamo, G.J.4    Shih, C.K.5
  • 15
    • 1842424395 scopus 로고    scopus 로고
    • Atom-resolved scanning tunneling microscopy of (In,Ga)As quantum wires on GaAs(311)A
    • Wen H, Wang ZM, Salamo GJ: Atom-resolved scanning tunneling microscopy of (In,Ga)As quantum wires on GaAs(311)A. Appl Phys Lett 2004,84:1756.
    • (2004) Appl Phys Lett , vol.84 , pp. 1756
    • Wen, H.1    Wang, Z.M.2    Salamo, G.J.3
  • 16
    • 14644433028 scopus 로고    scopus 로고
    • Directed self-assembly of Ge nanostructures on very high index, highly anisotropic Si (hkl) surfaces
    • Ohmori K, Foo YL, Hong S, Wen JG, Greene JE, Petrov I: Directed self-assembly of Ge nanostructures on very high index, highly anisotropic Si (hkl) surfaces. Nano Lett 2005, 5:369.
    • (2005) Nano Lett , vol.5 , pp. 369
    • Ohmori, K.1    Foo, Y.L.2    Hong, S.3    Wen, J.G.4    Greene, J.E.5    Petrov, I.6
  • 17
    • 0001712799 scopus 로고    scopus 로고
    • Self-assembled Ge nanowires grown on Si(113)
    • Omi H, Ogino T: Self-assembled Ge nanowires grown on Si(113). Appl Phys Lett 1997, 71:2163.
    • (1997) Appl Phys Lett , vol.71 , pp. 2163
    • Omi, H.1    Ogino, T.2
  • 20
  • 22
    • 0001240527 scopus 로고    scopus 로고
    • Kinetic growth instabilities on vicinal Si(001) surfaces
    • Schelling C, Springholz G, Schäffler F: Kinetic growth instabilities on vicinal Si(001) surfaces. Phys Rev Lett 1999, 83:995.
    • (1999) Phys Rev Lett , vol.83 , pp. 995
    • Schelling, C.1    Springholz, G.2    Schäffler, F.3
  • 23
    • 0037166842 scopus 로고    scopus 로고
    • Critical role of the surface reconstruction in the thermodynamic stability of {105} Ge pyramids on Si(001)
    • Raiteri P, Migas DB, Miglio L, Rastelli A, von Känel H: Critical role of the surface reconstruction in the thermodynamic stability of {105} Ge pyramids on Si(001). Phys Rev Lett 2002, 88:256103.
    • (2002) Phys Rev Lett , vol.88 , pp. 256103
    • Raiteri, P.1    Migas, D.B.2    Miglio, L.3    Rastelli, A.4    von Känel, H.5
  • 24
    • 0033521177 scopus 로고    scopus 로고
    • Transition states between pyramids and domes during Ge/Si island growth
    • Ross FM, Tromp RM, Reuter MC: Transition states between pyramids and domes during Ge/Si island growth. Science 1999, 286:1931.
    • (1999) Science , vol.286 , pp. 1931
    • Ross, F.M.1    Tromp, R.M.2    Reuter, M.C.3
  • 26
    • 42749107912 scopus 로고    scopus 로고
    • Simulation of Ge/Si intermixing during heteroepitaxy
    • Wagner RJ, Gulari E: Simulation of Ge/Si intermixing during heteroepitaxy. Phys Rev B 2004, 69:195312.
    • (2004) Phys Rev B , vol.69 , pp. 195312
    • Wagner, R.J.1    Gulari, E.2
  • 27
    • 0000082066 scopus 로고    scopus 로고
    • Multiple layers of self-asssembled Ge/Si islands: Photoluminescence, strain fields, material interdiffusion, and island formation
    • Schmidt OG, Eberl K: Multiple layers of self-asssembled Ge/Si islands: photoluminescence, strain fields, material interdiffusion, and island formation. Phys Rev B 2000, 61:13721.
    • (2000) Phys Rev B , vol.61 , pp. 13721
    • Schmidt, O.G.1    Eberl, K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.