P3HT/n--Si heterojunction diodes and photovoltaic devices investigated by I-V and C-V measurements

IEICE Transactions on Electronics

Volumn E94-C, Issue 12, 2011, Pages 1838-1844

  Oyama, Naoki ^a   Kaneko, Sho ^a   Momiyama, Katsuaki ^a   Hirose, Fumihiko ^a  

^a YAMAGATA UNIVERSITY   (Japan)

Author keywords

Flexible electronics; Heterojunction; Poly(3 hexylthiophene); Schottky diode

Indexed keywords

BIAS VOLTAGE; CAPACITANCE; DIODES; FLEXIBLE ELECTRONICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SILICON; SILICON CARBIDE; SOLAR POWER GENERATION;

CAPACITANCE-VOLTAGE CHARACTERISTICS; OPEN CIRCUIT CONDITIONS; ORGANIC/INORGANIC HETEROJUNCTIONS; POLY (3-HEXYLTHIOPHENE); POWER CONVERSION EFFICIENCIES; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODE MODELING; SCHOTTKY DIODES;

HETEROJUNCTIONS;

EID: 84055191622     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1587/transele.E94.C.1838     Document Type: Article

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