Crystallization study of "melt quenched" amorphous GeTe by transmission electron microscopy for phase change memory applications

Applied Physics Letters

Volumn 99, Issue 24, 2011, Pages

  Bastard, A ^a,b,c   Bastien, J C ^b,d   Hyot, B ^b   Lhostis, S ^a,b   Mompiou, F ^c   Bonafos, C ^c   Servanton, G ^a   Borowiak, C ^a   Lorut, F ^a   Bicais Lepinay, N ^a   Toffoli, A ^b   Sandhya, C ^b   Fantini, A ^b   Perniola, L ^b   Gourvest, E ^a,b   Maitrejean, S ^b   Roule, A ^b   Sousa, V ^b   Bensahel, D ^a   Andre B ^b  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c UNIVERSITÉ DE TOULOUSE   (France)

^d INSTITUT DES SCIENCES CHIMIQUES DE RENNES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLITE MORPHOLOGY; CRYSTALLIZATION BEHAVIOR; CRYSTALLIZATION MECHANISMS; IN-SITU TRANSMISSION; TRANSMISSION ELECTRON; VOID FORMATION;

ELECTRONS; HIGH RESOLUTION ELECTRON MICROSCOPY; IN SITU PROCESSING; PHASE CHANGE MEMORY; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 83755173283     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3668095     Document Type: Article

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