Maximally-localized wannier functions for disordered systems: Application to amorphous silicon

Solid State Communications

Volumn 107, Issue 1, 1998, Pages 7-11

  Silvestrelli, Pier Luigi ^a   Marzari, Nicola ^b   Vanderbilt, David ^b   Parrinello, Michele ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

A. disordered systems; A. semiconductors; C. point defects; D. electronic states (localized)

Indexed keywords

BONDING; CHARACTERIZATION; ELECTRONIC DENSITY OF STATES; ELECTRONIC PROPERTIES; POINT DEFECTS; SEMICONDUCTOR MATERIALS;

BOND DISTRIBUTION; DISORDERED SYSTEM; WANNIER FUNCTION METHOD;

AMORPHOUS SILICON;

EID: 0032066447     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(98)00175-6     Document Type: Article

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