Controlling polarization dependent reactions to fabricate multi-component functional nanostructures

Advanced Functional Materials

Volumn 21, Issue 24, 2011, Pages 4712-4718

  Conklin, David ^a   Park, Tae Hong ^b   Nanayakkara, Sanjini ^a   Therien, Michael J ^c   Bonnell, Dawn A ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

^b UNIVERSITY OF PENNSYLVANIA   (United States)

^c DUKE UNIVERSITY   (United States)

Author keywords

ferroelectric polarization; lithography; metal nanoparticles; molecular wire; optoelectronic device

Indexed keywords

DIRECTED ASSEMBLY; FERROELECTRIC DOMAINS; FERROELECTRIC NANOLITHOGRAPHY; FERROELECTRIC POLARIZATION; FUNCTIONAL NANOSTRUCTURES; FUNCTIONALIZED; HYBRID DEVICES; HYBRID NANOSTRUCTURES; LITHOGRAPHIC PROCESS; METAL NANOPARTICLES; MOLECULAR WIRES; MULTICOMPONENTS; NANOPARTICLE ARRAY; NANOPARTICLE DEPOSITION; OPTICALLY ACTIVE; PHOTON ENERGY; PHOTON FLUX; PHOTOREACTIONS; POLARIZATION VECTORS; PORPHYRIN COMPLEXES; SURFACE INTERACTIONS;

FERROELECTRIC MATERIALS; FERROELECTRICITY; HYBRID MATERIALS; LITHOGRAPHY; NANOPARTICLES; OPTOELECTRONIC DEVICES; PHOTONS; PORPHYRINS;

POLARIZATION;

EID: 83655191355     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201101673     Document Type: Article

References (43)

1. H. Schift, J. Vac. Sci.Technol. B. 2008, 26, 458.
2. J. Yao, A.-P. Le, S. K. Gray, J. S. Moore, J. A. Rogers, R. G. Nuzzo, Adv. Mater. 2010, 22, 1102.
3. N. Sary, F. Richard, C. Brochon, N. Leclerc, P. Leveque, J. N. Audinot, S. Berson, T. Heiser, G. Hadziioannou, R. Mezzenga, Adv. Mater. 2010, 22, 763.
4. J. Zheng, J. J. Birktoft, Y. Chen, T. Wang, R. Sha, P. E. Constantinou, S. L. Ginell, C. Mao, N. C. Seeman, Nature 2009, 461, 74.
5. A. M. Hung, H. Noh, J. N. Cha, Nanoscale 2010, 2, 2530.
6. B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee, W. Jo, Nature 1999, 401, 682.
7. Y. Yuan, T. J. Reece, P. Sharma, S. Poddar, S. Ducharme, A. Gruverman, Y. Yang, J. Huang, Nat. Mater. 2011, 10, 296.
8. N. Setter, D. Damjanovic, L. Eng, G. Fox, S. Gevorgian, S. Hong, A. Kingon, H. Kohlstedt, N. Y. Park, G. B. Stephenson, I. Stolitchnov, A. K. Taganstev, D. V. Taylor, T. Yamada, S. Streiffer, J. Appl. Phys. 2006, 100, 051606.
9. M. Dawber, K. M. Rabe, J. F. Scott, Rev. Modern Phys. 2005, 77, 1083.
10. A. Gruverman, A. Kholkin, Rep. Progr. Phys. 2006, 69, 2443.
11. S. V. Kalinin, D. A. Bonnell, T. Alvarez, X. Lei, Z. Hu, R. Shao, J. H. Ferris, Adv. Mater. 2004, 16, 795.
12. T. V. Duncan, K. Susumu, L. E. Sinks, M. J. Therien, J. Am. Chem. Soc. 2006, 128, 9000.
13. K. Susumu, P. R. Frail, P. J. Angiolillo, M. J. Therien, J. Am Chem. Soc 2006, 128, 8380.
14. P. Banerjee, D. Conklin, S. Nanayakkara, T.-H. Park, M. J. Therien, D. A. Bonnell, ACS Nano 2010, 4, 1019.
15. V. S.-Y. Lin, S. G. DiMagno, M. J. Therien, Science 1994, 264, 1105.
16. V. S. Y. Lin, M. J. Therien, Chem. Eur. J. 1995, 1, 645.
17. I. V. Rubtsov, K. Susumu, G. I. Rubtsov, M. J. Therien, J. Am. Chem. Soc. 2003, 125, 2687.
18. N. V. Burbure, P. A. Salvador, G. S. Rohrer, J. Am. Ceram. Soc. 2006, 89, 2943.
19. P. M. Jones, S. Dunn, Nanotechnology 2007, 18, 185702.
20. D. Tiwari, S. Dunn, J. Mater. Sci. 2009, 44, 5063.
21. M. H. Zhao, D. A. Bonnell, J. M. Vohs, Surf. Sci. 2008, 602, 2849.
22. M. H. Zhao, D. A. Bonnell, J. M. Vohs, J. Vac. Sci.Technol. A. 2009, 27, 1337.
23. J. Garra, J. M. Vohs, D. A. Bonnell, J. Vac. Sci.Technol. A. 2009, 27, L13.
24. M. H. Zhao, D. A. Bonnell, J. M. Vohs, Surf. Sci. 2009, 603, 284.
25. E. I. Altman, U. D. Schwarz, Adv. Mater. 2010, 22, 2854.
26. C. Rankin, C.-H. Chou, D. Conklin, D. A. Bonnell, ACS Nano 2007, 1, 234.
27. D. Li, D. A. Bonnell, Ceram. Int. 2008, 34, 157.
28. J. J. L. Giocondi, G. S. Rohrer, J. Phys. Chem. B 2001, 105, 8275.
29. J. N. Hanson, B. J. Rodriguez, R. J. Nemanich, A. Gruverman, Nanotechnology 2006, 17, 4946.
30. S. Dunn, P. M. Jones, D. E. Gallardo, J. Am. Chem. Soc. 2007, 129, 8724.
31. D. Li, D. A. Bonnell, Ann. Rev. Mater. Res. 2008, 38, 351.
32. D. B. Li, D. R. Strachan, J. H. Ferris, D. A. Bonnell, J. Mater. Res. 2006, 21, 935.
33. X. Lei, D. Li, R. Shao, D. A. Bonnell, J. Mater. Res. 2005, 20, 712.
34. R. Shao, M. P. Nikiforov, D. A. Bonnell, Appl. Phys. Lett. 2006, 89, 3.
35. J. F. Scott, Jpn. J. Appl. Phys. 1999, 38, 2272.
36. N. V. Burbure, P. A. Salvador, G. S. Rohrer, Chem. Mater 2010, 22, 5823.
37. R. I. Masel, Principles of adsorption and reaction on solid surfaces, Wiley, New York, 1996, p. xiv, 804.
38. D. A. Bonnell, Y. Liang, M. Wagner, D. Carroll, M. Rühle, Acta Mater. 1998, 46, 2263.
39. S. M. Sze, K. K. Ng, Physics of semiconductor devices, Wiley- Interscience, Hoboken, N.J., 2007, p. x, 815.
40. S. K. Ghosh, T. Pal, Chem. Rev. 2007, 107, 4797.
41. A. Zabet-Khosousi, A. A. Dhirani, Chem. Rev. 2008, 108, 4072.
42. H. Nakanishi, K. J. M. Bishop, B. Kowalczyk, A. Nitzan, E. A. Weiss, K. V. Tretiakov, M. M. Apodaca, R. Klajn, J. F. Stoddart, B. A. Grzybowski, Nature 2009, 460, 371.
43. E. Ringe, J. M. McMahon, K. Sohn, C. Cobley, Y. Xia, J. Huang, G. C. Schatz, L. D. Marks, R. P. Van Duyne, J. Phys. Chem. C 2010, 114, 12511.