X-ray radiation effects in multilayer epitaxial graphene

Applied Physics Letters

Volumn 99, Issue 23, 2011, Pages

  Hicks, Jeremy ^a   Arora, Rajan ^b   Kenyon, Eleazar ^b   Chakraborty, Partha S ^b   Tinkey, Holly ^a   Hankinson, John ^a   Berger, Claire ^a,c   De Heer, Walt A ^a   Conrad, Edward H ^a   Cressler, John D ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c LABORATOIRE DE CRISTALLOGRAPHIE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON-OXYGEN BONDS; DAMAGE MECHANISM; ELECTRICAL CHARACTERISTIC; EPITAXIAL GRAPHENE; FREE CARRIER CONCENTRATION; GRAPHENE LAYERS; RADIATION EXPOSURE; REACTIVE OXYGEN SPECIES; SHEET RESISTIVITY; SURFACE ETCHING; TOTAL IONIZING DOSE; X-RAY SOURCES;

CARRIER CONCENTRATION; CARRIER MOBILITY; GRAPHENE; IONIZING RADIATION; MULTILAYERS; OXYGEN; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

RADIATION EFFECTS;

EID: 83455230753     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3665953     Document Type: Article

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