Probing the electrostatics of self-assembled monolayers by means of beveled metal-oxide-semiconductor structures

Applied Physics Letters

Volumn 99, Issue 23, 2011, Pages

  Kornblum, Lior ^a   Paska, Yair ^a   Rothschild, Jonathan A ^a   Haick, Hossam ^a   Eizenberg, Moshe ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ANCHORING GROUPS; BAND OFFSETS; EFFECTIVE WORK FUNCTION; METAL DEPOSITION; METAL OXIDE INTERFACE; METAL OXIDE SEMICONDUCTOR STRUCTURES; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; MODEL SYSTEM; NO MOLECULE;

DIELECTRIC DEVICES; DISSOCIATION; ELECTROSTATICS; METALS; SILICON COMPOUNDS;

SELF ASSEMBLED MONOLAYERS;

EID: 83455163971     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3665630     Document Type: Article

References (23)

1. D. Cahen, R. Naaman, and Z. Vager, Adv. Funct. Mater. 15, 1571 (2005). 10.1002/adfm.200500187 (Pubitemid 41454584)
2. Y. Engel, R. Elnathan, A. Pevzner, G. Davidi, E. Flaxer, and F. Patolsky, Angew. Chem. Int. Ed. 49, 6830 (2010). 10.1002/anie.201000847
3. O. Shaya, H. Einati, N. Fishelson, Y. Shacham-Diamand, and Y. Rosenwaks, Appl. Phys. Lett. 97, 053501 (2010). 10.1063/1.3476337
4. Y. Paska, T. Stelzner, S. Christiansen, and H. Haick, ACS Nano 5, 5620 (2011). 10.1021/nn201184c
5. S. A. DiBenedetto, A. Facchetti, M. A. Ratner, and T. J. Marks, Adv. Mater. 21, 1407 (2009). 10.1002/adma.200803267
6. B. Tian, X. Zheng, T. J. Kempa, Y. Fang, N. Yu, G. Yu, J. Huang, and C. M. Lieber, Nature 449, 885 (2007). 10.1038/nature06181 (Pubitemid 47598610)
7. A. Vilan, A. Shanzer, and D. Cahen, Nature 404, 166 (2000). 10.1038/35004539 (Pubitemid 30154479)
8. H. Haick, M. Ambrico, T. Ligonzo, R. T. Tung, and D. Cahen, J. Am. Chem. Soc. 128, 6854 (2006). 10.1021/ja058224a (Pubitemid 43830573)
9. A. Scott, C., Risko, N. Valley, M. A. Ratner, and D. B. Janes, J. Appl. Phys. 107, 024505 (2010) 10.1063/1.3251466
10. D. Vuillaume, C. Boulas, J. Collet, G. Allan, and C. Delerue, Phys. Rev. B 58, 16491 (1998). 10.1103/PhysRevB.58.16491
11. S. R. Puniredd, O. Assad, T. Stelzner, S. Christiansen, and H. Haick, Langmuir 27, 4764 (2011). 10.1021/la2002546
12. D. Knapp, B. S. Brunschwig, and N. S. Lewis, J. Phys. Chem. C 114, 12300 (2010). 10.1021/jp101375x
13. Y. Paska and H. Haick, J. Phys. Chem. C 113, 1993 (2009). 10.1021/jp809996b
14. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982).
15. R. Jha, J. Gurganos, Y. H. Kim, R. Choi, J. Lee, and V. Misra, IEEE Electron Device Lett. 25, 420 (2004). 10.1109/LED.2004.829032
16. J. Robertson, J. Vac. Sci. Technol. B 27, 277 (2009). 10.1116/1.3072517
17. T. H. Ning, J. Appl. Phys. 49, 4077 (1978). 10.1063/1.325368 (Pubitemid 8635307)
18. Y. Paska and H. Haick, Appl. Phys. Lett. 95, 233103 (2009). 10.1063/1.3266858
19. K. Konstadinidis, P. Zhang, R. L. Opila, and D. L. Allara, Surf. Sci. 338, 300 (1995). 10.1016/0039-6028(95)80048-4
20. B. de Boer, M. M. Frank, Y. J. Chabal, W. Jiang, E. Garfunkel, and Z. Bao, Langmuir 20, 1539 (2004). 10.1021/la0356349
21. A. V. Walker, T. B. Tighe, J. Stapleton, B. C. Haynie, S. Upilli, D. L. Allara, and N. Winograd, Appl. Phys. Lett. 84, 4008 (2004). 10.1063/1.1748844
22. H. Haick, J. Ghabboun, and D. Cahen, Appl. Phys. Lett. 86, 042113 (2005). 10.1063/1.1854742 (Pubitemid 40232186)
23. D. W. Fakes, J. M. Newton, J. F. Watts, and M. J. Edgell, Surf. Interface Anal. 10, 416 (1987). 10.1002/sia.740100807