Fabrication of dry etched and subsequently passivated laser facets in GaAs/AlGaAs

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 5, 2004, Pages 2201-2205

  Deichsel, Eckard ^a,b   Franz, Gerhard ^c  

^a UNIVERSITY OF ULM   (Germany)

^b EPFL   (Switzerland)

^c MUNICH UNIVERSITY OF APPLIED SCIENCES   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; CHEMICAL BONDS; IN SITU COMBUSTION; MOLECULAR BEAM EPITAXY; PHOTODIODES; PROTECTIVE COATINGS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; WSI CIRCUITS;

FULL-WAFER PROCESSING; LASER FACETS; PLASMA PASSIVATION; PLASMA TREATMENT;

DRY ETCHING;

EID: 8344289089     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1786307     Document Type: Article

References (18)

1. C. J. Sandroff, M. S. Hegde, and C. C. Chang, J. Vac. Sci. Technol. B 7, 841 (1989).
2. M. S. Carpenter, M. R. Melloch, B. A. Cowana, Z. Dardas, and W. N. Delgass, J. Vac. Sci. Technol. B 7, 845 (1989).
3. P. Buchmann, H. P. Dietrich, G. Sasso, and P. Vettiger, Microelectron. Eng. 9, 485 (1989).
4. P. Vettiger, M. Benedict, G.-L. Bona, P. Buchmann, E. C. Cahoon, K. Dätwyler, H. P. Dietrich, A. Moser, H. K. Seitz, O. Voegeli, D. J. Webb, and P. Wolf, IEEE J. Quantum Electron. 27, 1319 (1991).
5. P. Unger, V. Boegli, P. Buchmann, and R. German, J. Vac. Sci. Technol. B 11, 2514 (1993).
6. G. Beister, J. Maege, D. Gutsche, G. Erbert, J. Sebastian, K. Vogel, M. Weyers, and J. Würfl, Appl. Phys. Lett. 68, 2467 (1996).
7. P. Collot, S. Delalande, and J. Olivier, Electron. Lett. 35, 506 (1999).
8. U. Mohideen, W. S. Hobson, S. J. Pearton, F. Ren, and R. E. Slusher, Appl. Phys. Lett. 64, 1911 (1994).
9. L. J. Gao, J. A. Bardwell, Z.-H. Lu, M. J. Graham, and P. R. Norton, J. Electrochem. Soc. 142, L14 (1995).
10. T. Tiedje, K. M. Colbow, D. Rogers, Z. Fu, and W. Eberhardt, J. Vac. Sci. Technol. B 7, 837 (1989).
11. R. Jäger, J. Heerlein, E. Deichsel, and P. Unger, J. Cryst. Growth 201/ 202, 882 (1999).
12. E. Deichsel, F. Eberhard, R. Jäger, and P. Unger, IEEE J. Sel. Top. Quantum Electron. 7, 106 (2001).
13. E. Deichsel, R. Jäger, and P. Unger, Jpn. J. Appl. Phys., Part 1 41, 4279 (2002).
14. G. Franz, J. Vac. Sci. Technol. A 16, 1542 (1998).
15. G. Franz, J. Electrochem. Soc. 137, 2896 (1990).
16. J. Kaindl, S. Sotier, and G. Franz, J. Electrochem. Soc. 142, 2418 (1995).
17. G. Franz, J. Electrochem. Soc. 140, 1147 (1993).
18. G. Franz and F. Rinner, J. Vac. Sci. Technol. A 17, 56 (1999).