63% wallplug efficiency MBE grown InGaAs/AlGaAs broad-area laser diodes and arrays with carbon p-type doping using CBr4

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 882-885

  Jäger, Roland ^a   Heerlein, Jörg ^a   Deichsel, Eckard ^a   Unger, Peter ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; HETEROJUNCTIONS; QUANTUM WELL LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

GRADED INDEX CONFINEMENT HETEROSTRUCTURE (GRINSCH); WALLPLUG EFFICIENCY;

MOLECULAR BEAM EPITAXY;

EID: 0344614015     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01491-2     Document Type: Article

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