A capacitance-compensation technique for improved linearity in CMOS class-AB power amplifiers

IEEE Journal of Solid-State Circuits

Volumn 39, Issue 11, 2004, Pages 1927-1937

  Wang, Chengzhou ^a,b   Vaidyanathan, Mani ^a,c   Larson, Lawrence E ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b MARVELL SEMICONDUCTOR INC   (United States)

^c UNIVERSITY OF ALBERTA   (Canada)

Author keywords

Adjacent channel power ratio (ACPR); Class AB power amplifiers; CMOS; Intermodulation distortion; Linearity; Radio frequency (RF) circuits; Volterra series; WCDMA

Indexed keywords

AMPLIFIERS (ELECTRONIC); CAPACITANCE; CODE DIVISION MULTIPLE ACCESS; COMPUTER SIMULATION; INTEGRATED CIRCUITS; MATHEMATICAL MODELS; POWER AMPLIFIERS; VECTORS;

ADJACENT-CHANNEL POWER RATIO (ACPR); INTERMODULATION DISTORTION; RADIO FREQUENCY CIRCUITS;

CMOS INTEGRATED CIRCUITS;

EID: 8344276761     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2004.835834     Document Type: Article

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