Broadband high-efficiency monolithic InGaP/GaAs HBT power amplifiers for 3G handset applications

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2002, Pages 1035-1038

  Jager H ^a,b   Grebennikov, A ^a   Heaney, E ^a   Weigel, R ^b  

^a M/A COM   (United States)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT RESONANCE; CODE DIVISION MULTIPLE ACCESS; COMPUTER SIMULATION; ELECTRIC IMPEDANCE; EQUIVALENT CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TELEPHONE SETS; TRANSMISSION LINE THEORY;

INDIUM GALLIUM PHOSPHIDE; MULTI-MODE HANDSET POWER AMPLIFIER; POWER ADDED EFFICIENCY; REACTANCE COMPENSATION CIRCUIT; WIDEBAND CODE DIVISION MULTIPLE ACCESS;

POWER AMPLIFIERS;

EID: 0036067830     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2002.1011812     Document Type: Article

References (6)

1. A 50% efficiency In-GaP/GaAs HBT power amplifier module for 1.95 GHz wide-band CDMA handsets
2. E-PHEMT, single supply, high efficient power amplifiers for GSM and DCS applications
3. Broadband power efficient class E amplifiers with a non-linear CAD model of the active MOS device
4. A circuit technique for broadbanding the electronic tuning range of gunn oscillators
5. Reactance compensation matches FET circuits
6. Class E with parallel circuit - a new challenge for high-efficiency RF and microwave power amplifiers