1.55 μm Ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror

Applied Physics Letters

Volumn 85, Issue 14, 2004, Pages 2697-2699

  Li, C B ^a   Mao, R W ^a   Zuo, Y H ^a   Zhao, L ^a   Shi, W H ^a   Luo, L P ^a   Cheng, B W ^a   Yu, J Z ^a   Wang, Q M ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; CHEMICAL VAPOR DEPOSITION; ETCHING; METAL DETECTORS; OPTIMIZATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SILICON ON INSULATOR TECHNOLOGY; ULTRAHIGH VACUUM;

BOTTOM MIRRORS; DISTRIBUTED BRAGG REFLECTOR (DBR); MULTIQUANTUM WELLS; RESONANT-CAVITY-ENHANCED (RCE);

GERMANIUM;

EID: 8344233524     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1801166     Document Type: Article

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