Integration of wavelength signal divider and infrared photodetectors based on the plasma dispersion effect in SiGe/Si

Applied Physics Letters

Volumn 74, Issue 12, 1999, Pages 1663-1665

  Li, Baojun ^a   Jiang, Zuimin ^a   Pei, Chengwen ^a   Qin, Jie ^a   Wang, Xun ^a   Li, Guozheng ^b   Wan, Jianjun ^b   Liu, Enke ^b  

^a FUDAN UNIVERSITY   (China)

^b XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; INFRARED DETECTORS; INSERTION LOSSES; MONOLITHIC INTEGRATED CIRCUITS; PHOTOCURRENTS; PLASMA APPLICATIONS; QUANTUM EFFICIENCY; REFRACTIVE INDEX; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

DARK CURRENTS; LIGHT RECEIVERS; PLASMA DISPERSION EFFECT; WAVELENGTH SIGNAL DIVIDERS (WSD);

OPTICAL COMMUNICATION EQUIPMENT;

EID: 0032607528     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123647     Document Type: Article

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