Engineered linearity of GaN-based HEMTs power devices by tailoring transfer characteristics

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 6, 2009, Pages 1378-1381

  Bahat Treidel, Eldad ^a   Khalil, Ibrahim ^a   Hilt, Oliver ^a   Würfl, Joachim ^a   Tränkle, Günther ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GAN HEMTS; HIGH LINEARITY; INNOVATIVE METHOD; POWER DEVICES; RECESS DEPTH; TRANSFER CHARACTERISTICS; UNIT CELLS;

GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LINEARIZATION; SEMICONDUCTING GALLIUM; TRANSCONDUCTANCE;

OPTIMIZATION;

EID: 70349421164     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200881505     Document Type: Conference Paper

References (7)

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